Datasheet > SHB601051E_09

SHB601051E_09

更新时间： 2024-11-25 09:26:55

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描述
Silicon Carbide Single Phase Full Wave Bridge

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SHB601051E_09 数据手册

SENSITRON________

SEMICONDUCTOR

SHB601051E

Technical Data

Datasheet 5008 REV. B

Silicon Carbide Single Phase Full Wave Bridge

DESCRIPTION: 600-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE

IN A HERMETIC 5-LEAD TO-258 (MO-078) PACKAGE

FEATURES:

•

NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 °C UNLESS OTHERWISE SPECIFIED.

SYMBOL

MAX.

600

UNITS

Volts

PEAK INVERSE VOLTAGE

PIV

I_O

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC) WHEN USED AS

A BRIDGE

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT

(t = 8.3ms, Sine) per leg, T_C= 25 ^OC

I_FRM

Amps

MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

I_FSM

250

(t = 10μs, pulse) per leg, T_C= 25 ^OC

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC

P_d

MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a

BRIDGE)

1.0

R_θJC

°C/W

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*

Top, Tstg

-55 to

+200

°C

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device

above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.65

1.85

1.75

1.95

MAXIMUM FORWARD VOLTAGE (I_f= 10A PER LEG)

V_fT_J=25 °C

T_J=150 °C

V_fT_J=25 °C

T_J=150 °C

Volts

1.35

1.50

1.45

1.60

MAXIMUM FORWARD VOLTAGE (I_f= 6A PER LEG)

0.04

0.08

0.15

0.50

MAXIMUM REVERSE CURRENT (600V PIV PER LEG) I_rT_J= 25 °C

T_J= 150 °C

N/A

TOTAL CAPACITANCE CHARGE (V_R=600V, I_F=10A, di/dt=500A/μs and

T_J=25°C) Q_Cper leg

MAXIMUM JUNCTION CAPACITANCE (V_r=5V) per leg

C_J

350

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