品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
1页 | 38K | |
描述 | ||
TRANSISTOR,BJT POWER MODULE,DARLINGTON,200V V(BR)CEO,80A I(C) |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.77 |
最大集电极电流 (IC): | 80 A | 最小直流电流增益 (hFE): | 80 |
最大降落时间(tf): | 600 ns | 元件数量: | 1 |
最高工作温度: | 150 °C | 最大功率耗散 (Abs): | 375 W |
子类别: | BIP General Purpose Power | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
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