是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.92 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 500 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 50 W | 最大功率耗散 (Abs): | 50 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 2.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGS122 | STMICROELECTRONICS |
获取价格 |
5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3 | |
SGS125 | STMICROELECTRONICS |
获取价格 |
5A, 60V, PNP, Si, POWER TRANSISTOR | |
SGS13002 | STMICROELECTRONICS |
获取价格 |
TRANSISTOR,BJT,NPN,300V V(BR)CEO,3A I(C),TO-218 | |
SGS13002T | STMICROELECTRONICS |
获取价格 |
TRANSISTOR,BJT,NPN,300V V(BR)CEO,1.5A I(C),TO-220AB | |
SGS13003 | STMICROELECTRONICS |
获取价格 |
SGS13003, SO82-3 | |
SGS13003T | STMICROELECTRONICS |
获取价格 |
TRANSISTOR,BJT,NPN,400V V(BR)CEO,1.5A I(C),TO-220AB | |
SGS131 | STMICROELECTRONICS |
获取价格 |
8A, 80V, NPN, Si, POWER TRANSISTOR | |
SGS135 | STMICROELECTRONICS |
获取价格 |
8A, 60V, PNP, Si, POWER TRANSISTOR | |
SGS137 | STMICROELECTRONICS |
获取价格 |
8A, 100V, PNP, Si, POWER TRANSISTOR | |
SGS13N60UF | FAIRCHILD |
获取价格 |
Ultra-Fast IGBT |