Datasheet > SGS10N60RUFDTU

SGS10N60RUFDTU

更新时间： 2024-11-09 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	449K
描述
600V，10A，短路额定 IGBT

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数据手册

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SGS10N60RUFDTU 数据手册

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与SGS10N60RUFDTU相关器件

型号	品牌	获取价格	描述	数据表
SGS10N60RUFTU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN
SGS111	STMICROELECTRONICS	获取价格	2A, 80V, NPN, Si, POWER TRANSISTOR
SGS112	STMICROELECTRONICS	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR
SGS115	STMICROELECTRONICS	获取价格	2A, 60V, PNP, Si, POWER TRANSISTOR
SGS116	STMICROELECTRONICS	获取价格	2A, 80V, PNP, Si, POWER TRANSISTOR
SGS117	STMICROELECTRONICS	获取价格	2A, 100V, PNP, Si, POWER TRANSISTOR
SGS122	STMICROELECTRONICS	获取价格	5A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
SGS125	STMICROELECTRONICS	获取价格	5A, 60V, PNP, Si, POWER TRANSISTOR
SGS13002	STMICROELECTRONICS	获取价格	TRANSISTOR,BJT,NPN,300V V(BR)CEO,3A I(C),TO-218
SGS13002T	STMICROELECTRONICS	获取价格	TRANSISTOR,BJT,NPN,300V V(BR)CEO,1.5A I(C),TO-220AB

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