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SGS10N60RUFD PDF预览

SGS10N60RUFD

更新时间: 2024-12-09 22:17:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
8页 621K
描述
Short Circuit Rated IGBT

SGS10N60RUFD 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.67Is Samacsys:N
其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING外壳连接:ISOLATED
最大集电极电流 (IC):16 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):220 ns
门极发射器阈值电压最大值:8 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):284 ns标称接通时间 (ton):49 ns
Base Number Matches:1

SGS10N60RUFD 数据手册

 浏览型号SGS10N60RUFD的Datasheet PDF文件第2页浏览型号SGS10N60RUFD的Datasheet PDF文件第3页浏览型号SGS10N60RUFD的Datasheet PDF文件第4页浏览型号SGS10N60RUFD的Datasheet PDF文件第5页浏览型号SGS10N60RUFD的Datasheet PDF文件第6页浏览型号SGS10N60RUFD的Datasheet PDF文件第7页 
April 2001  
IGBT  
SGS10N60RUFD  
Short Circuit Rated IGBT  
General Description  
Features  
Fairchild's RUFD series of Insulated Gate Bipolar  
Transistors (IGBTs) provide low conduction and switching  
losses as well as short circuit ruggedness. The RUFD  
series is designed for applications such as motor control,  
uninterrupted power supplies (UPS) and general inverters  
where short circuit ruggedness is a required feature.  
Short circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.2 V @ I = 10A  
CE(sat)  
C
CO-PAK, IGBT with FRD : t = 42ns (typ.)  
rr  
Application  
AC & DC Motor controls, general purpose inverters, robotics, servo controls  
C
E
G
TO-220F  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGS10N60RUFD  
Units  
V
V
V
Collector-Emitter Voltage  
600  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
16  
A
C
I
C
Collector Current  
@ T = 100°C  
10  
A
C
I
I
I
Pulsed Collector Current  
30  
A
CM (1)  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for soldering  
purposes, 1/8” from case for 5 seconds  
@ T = 100°C  
12  
A
F
C
92  
10  
A
FM  
T
@ T = 100°C  
µs  
W
W
°C  
°C  
SC  
C
P
@ T  
=
25°C  
55  
D
C
@ T = 100°C  
22  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
(IGBT)  
2.3  
3.7  
θJC  
θJC  
θJA  
(DIODE)  
--  
Thermal Resistance, Junction-to-Ambient  
--  
62.5  
©2001 Fairchild Semiconductor Corporation  
SGS10N60RUFD Rev. A  

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