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SGM2014

更新时间： 2024-11-09 22:21:55

品牌	Logo	应用领域
索尼 - SONY		栅
页数	文件大小	规格书
5页	53K
描述
GaAs N-channel Dual Gate MES FET

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SGM2014 数据手册

SGM2014AM

GaAs N-channel Dual Gate MES FET

For the availability of this product, please contact the sales office.

Description

The SGM2014AM is an N-channel dual gate GaAs

MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications

including TV tuners, cellular radios, and DBS IF

amplifiers.

Features

• Low voltage operation

• Low noise: NF = 1.5dB (typ.) at 900MHz

• High gain: Ga = 18dB (typ.) at 900MHz

• Low cross-modulation

• High stability

• Built-in gate-protection diode

Application

UHF band amplifier, mixer and oscillator

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage

• Gate 1 to source voltage

• Gate 2 to source voltage

• Drain current

VDSX

VG1S

VG2S

–5

°C

• Allowable power dissipation

• Channel temperature

• Storage temperature

150

Tch

Tstg –55 to +150

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E96Y09-PS

12 3 4 5

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