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SGM2013

更新时间： 2024-09-26 22:21:55

品牌	Logo	应用领域
索尼 - SONY		栅
页数	文件大小	规格书
5页	57K
描述
GaAs N-channel Dual-Gate MES FET

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SGM2013N

GaAs N-channel Dual-Gate MES FET

For the availability of this product, please contact the sales office.

Description

M-281

The SGM2013N is an N-channel dual-gate GaAs

MES FET for UHF-band low-noise amplification. This

FET is suitable for a wide range of applications

including cellular/cordless phone.

Features

• Ultra-small package

• Low voltage operation

• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz

• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz

• High stability

• Built-in gate protection diode

Application

UHF-band high-frequency amplifier and mixer

Structure

GaAs, N-channel, dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage

• Gate 1 to source voltage

• Gate 2 to source voltage

• Drain current

VDSX

VG1S

VG2S

–4

°C

• Allowable power dissipation

• Channel temperature

• Storage temperature

100

Tch

Tstg

125

–55 to +150

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E97144-PS

12 3 4 5

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