Datasheet > SGL1D-HM32

SGL1D-HM32

更新时间： 2024-09-24 08:28:31

品牌	Logo	应用领域
固锝 - GOOD-ARK		二极管
页数	文件大小	规格书
3页	381K
描述
Rectifier Diode

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中文翻译

获取价格

技术参数
数据手册

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SGL1D-HM32 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.65
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

SGL1D-HM32 数据手册

SGL1A thru SGL1M

Schottky Barrier Rectifier

FEATURES

•

Ideal for automated placement

Low forward voltage drop

Low leakage current

Meets environmental standard MIL-S-19500D

Moisture sensitivity:level 1, per J-STD-020

Solder dip 275 °C, 10s

Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

DO‐213AA

TYPICAL APPLICATIONS

For use in general purpose rectification of lighting, power supplies, inverters, converters and

freewheeling diodes for consumer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

1 A

20 V to 100 V

27 A

IF(AV)

VRRM

IFSM

0.5 V ,0.8V

150 °C

TJ max.

MECHANICAL DATA

Case: DO-213AA, molded epoxy body，Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22B-106

Polarity: One silver ring denotes cathode and the type numbers are noted on the label on the

reel

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

SGL1A

SGL1B

SGL1D

SGL1G

SGL1J

SGL1K

SGL1M

UNIT

PARAMETER

SYMBOL

VRRM

VRMS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

VDC

100

Maximum average forward rectified current at TT =

75 °C

IF(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

IFSM

Operating junction and storage temperature range

TJ, TSTG

- 55 to + 150

°C

1/3

12 3

中文翻译

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