Datasheet > SGF15D100J

SGF15D100J

更新时间： 2025-07-20 18:09:23

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	100K
描述
15 A, 1000 V, 140 mΩ typ GaN FET Normally-On

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SGF15D100J 数据手册

SGF15D100

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

15 AMP, 1000 VOLTS

GaN FET Normally-On

140 mΩ typ

Designer’s Data Sheet

Part Number/Ordering Information^1/

SGF15D100 __ __ __

FEATURES:

└ Screening^2/

__ = Not Screened

•

3^rdGeneration Gallium Nitride Technology

Low R_DS(ON)

│

└

│

└

Low Q_GSimplifies Gate Drive Circuit

Very Fast Switching for High Frequency Applications

Low Thermal Resistance

Hermetically Sealed Package

TX, TXV, and S-Level Screening Available^2/

Available as Normally Off (with FET Driver)

TX = TX Level

TXV = TXV Level

S = S Level

Lead Bend Options

(TO-257 only)

__ = Straight Leads

UB = Up Bend

DB = Down Bend

APPLICATIONS:

•

High Efficiency DC-DC / PoL Converters

Motor Controller

Robotics / Automation

Package

J = TO-257

Military and Aerospace

BENEFITS:

•

GaN Transistor offers superior advantages over Si based MOSFET: zero Q_RR, low gate charge, low R_DS(ON), fast switching

speed and low temperature coefficient.

•

Benefits circuit designer through higher efficiency, lower cross-over losses and On-state losses.

Eliminates the need to add free-wheeling diode

Maximum Ratings^3/

Symbol

V_DSS

Value

Unit

Continuous Drain – Source Voltage

1000

DC (max/min)

Pulse (max/min)

0 / -30

+5 / -40

Gate – Source Voltage

V_GS

I_D1

I_D2

T_C= 25°C

T_C= 100°C

Continuous Drain Current

Pulsed Drain Current

Pulse width: 10 µs

I_D3

Total Power Dissipation

P_D

Operating & Storage Temperature

T_OP& T_STG

-55 to +150

°C

Thermal Resistance

Junction to Case

NOTES:

1/ For ordering information, price, operating curves, and availability- contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @ 25°C.

4/ Pulse Test, P_W= 300 µs, D.C. = 2%.

R_θJC

°C/W

TO-257 (J)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0115A

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