Datasheet > SGC2463ZSR

SGC2463ZSR

更新时间： 2024-11-14 01:03:55

品牌	Logo	应用领域
威讯 - RFMD		射频微波
页数	文件大小	规格书
7页	678K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC2463ZSR 数据手册

SGC2463Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-363

Product Description

Features

RFMD’s SGC2463Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC2463Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC2463Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50.



Single Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry

=10.5dBm at 1950MHz

1dB



OIP =23.5dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

Optimum Technology

Gain & Return Loss V_D= 3V, I_D= 25mA

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

S21

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS,

WCDMA

Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C

S22

S11



IF Amplifier

-10

-20

-30



GaAs pHEMT

Si CMOS

Wireless Data, Satellite

Si BJT

0.5

1.5

2.5

3.5

GaN HEMT

RF MEMS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

17.4

12.9

Typ.

19.8

14.4

13.4

10.5

9.9

22.5

23.5

24.0

14.0

12.5

3.5

Max.

21.3

15.9

Small Signal Gain

dBm

°C/W

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

1950MHz

1930MHz

junction - lead

Output Power at 1dB Compression

Output Third Order Intercept Point

9.5

21.5

Input Return Loss

Output Return Loss

Noise Figure

Thermal Resistance

Device Operating Voltage

Device Operating Current

10.0

8.5

4.5

255

3.0

26.0

22.0

30.0

Test Conditions: V_D=3V, I_D=26mA Typ., OIP₃Tone Spacing=1MHz, P_OUTper tone=-5dBm, T_L=25°C, Z_S=Z_L=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS140429

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与SGC2463ZSR相关器件

型号	品牌	获取价格	描述	数据表
SGC-2486_1	SIRENZA	获取价格	50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
SGC-2486Z	SIRENZA	获取价格	50-4000 MHz Silicon Germanium Cascadable Gain Block
SGC250	ETC	获取价格	Optoelectronic
SGC251BS	GOOD-ARK	获取价格	Surface Mount Schottky Rectifier
SGC251BS_15	GOOD-ARK	获取价格	Surface Mount Schottky Rectifier Reverse Voltage 100V Forward Current 25A
SGC2545S	GOOD-ARK	获取价格	Rectifier Diode,
SGC2545S_15	GOOD-ARK	获取价格	Surface Mount Schottky Rectifier Reverse Voltage 45V Forward Current 25A
SGC2550S	GOOD-ARK	获取价格	Surface Mount Schottky Rectifier Reverse Voltage 50~60V Forward Current 25A
SGC2550S_15	GOOD-ARK	获取价格	Surface Mount Schottky Rectifier Reverse Voltage 50~60V Forward Current 25A
SGC256	ETC	获取价格	Optoelectronic

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