Datasheet > SGC2363ZPCK1

SGC2363ZPCK1

更新时间： 2024-11-14 01:03:55

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
6页	331K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC2363ZPCK1 数据手册

SGC2363Z

50MHz to

4000MHz

Active Bias Sili-

con Germa-

nium

SGC2363Z

Cascadable

Gain Block

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-363

Product Description

Features

RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active-bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC2363Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC2363Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50.



Single, Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry

=10.1dBm at 1950MHz

1dB



OIP =23dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

Optimum Technology

Matching® Applied

Gain & Return Loss V_D= 3V, I_D= 26mA

S21

GaAs HBT

Applications

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS



PA Driver Amplifier



Cellular, PCS, GSM, UMTS,

WCDMA

Bias Tee Data, Z_S= Z_L= 50 Ohms, T_L= 25C

SiGe HBT



IF Amplifier



-10

-20

-30

S22

S11

GaAs pHEMT

Si CMOS

Wireless Data, Satellite

Si BJT

0.5

1.5

2.5

3.5

GaN HEMT

RF MEMS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

15.5

11.6

Typ.

17.0

13.1

12.3

10.4

10.1

9.6

23.0

24.0

15.0

14.5

3.7

Max.

18.5

14.6

Small Signal Gain

dBm

°C/W

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

1950MHz

1930MHz

junction - lead

Output Power at 1dB Compression

Output Third Order Intercept Point

9.1

21.0

Input Return Loss

Output Return Loss

Noise Figure

Thermal Resistance

Device Operating Voltage

Device Operating Current

12.0

10.5

4.8

255

3.0

26.0

22.0

30.0

Test Conditions: V =3V, I =26mA Typ., OIP Tone Spacing=1MHz, P

per tone=-5dBm, T =25°C, Z =Z =50

L S L

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111011

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与SGC2363ZPCK1相关器件

型号	品牌	获取价格	描述	数据表
SGC2363ZPCK2	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC2363ZSQ	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC2363ZSR	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC-2386	SIRENZA	获取价格	50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
SGC-2386_1	SIRENZA	获取价格	50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
SGC-2386Z	SIRENZA	获取价格	50-4000 MHz Silicon Germanium Cascadable Gain Block
SGC240	ETC	获取价格	Optoelectronic
SGC243	ETC	获取价格	Optoelectronic
SGC2463Z	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC-2463Z	SIRENZA	获取价格	50-4000 MHz Silicon Germanium Cascadable Gain Block

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