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SGC2363Z

更新时间： 2024-09-26 01:03:55
品牌 Logo 应用领域
威讯 - RFMD 射频微波
页数 文件大小 规格书
6页 331K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC2363Z 数据手册

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SGC2363Z  
50MHz to  
4000MHz  
Active Bias Sili-  
con Germa-  
nium  
SGC2363Z  
Cascadable  
Gain Block  
50MHz to 4000MHz ACTIVE BIAS SILICON  
GERMANIUM CASCADABLE GAIN BLOCK  
Package: SOT-363  
Product Description  
Features  
RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz-  
ing a Darlington configuration with a patented active-bias network. The  
active bias network provides stable current over temperature and process  
Beta variations. Designed to run directly from a 3V supply, the SGC2363Z  
does not require a dropping resistor as compared to typical Darlington  
amplifiers. The SGC2363Z is designed for high linearity 3V gain block  
applications that require small size and minimal external components. It is  
internally matched to 50.  
Single, Fixed 3V Supply  
No Dropping Resistor  
Required  
Patented Self-Bias Circuitry  
P
=10.1dBm at 1950MHz  
1dB  
OIP =23dBm at 1950MHz  
3
Robust 1000V ESD, Class 1C  
HBM  
Optimum Technology  
Matching® Applied  
Gain & Return Loss VD = 3V, ID = 26mA  
S21  
30  
20  
10  
0
GaAs HBT  
Applications  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS,  
WCDMA  
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C  
SiGe HBT  
IF Amplifier  
-10  
-20  
-30  
S22  
S11  
GaAs pHEMT  
Si CMOS  
Wireless Data, Satellite  
Si BJT  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
GaN HEMT  
RF MEMS  
Frequency (GHz)  
Specification  
Parameter  
Unit  
Condition  
Min.  
15.5  
11.6  
Typ.  
17.0  
13.1  
12.3  
10.4  
10.1  
9.6  
23.0  
23.0  
24.0  
15.0  
14.5  
3.7  
Max.  
18.5  
14.6  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
dB  
dB  
°C/W  
V
mA  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
1950MHz  
1950MHz  
1930MHz  
junction - lead  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
9.1  
21.0  
Input Return Loss  
Output Return Loss  
Noise Figure  
Thermal Resistance  
Device Operating Voltage  
Device Operating Current  
12.0  
10.5  
4.8  
255  
3.0  
26.0  
22.0  
30.0  
Test Conditions: V =3V, I =26mA Typ., OIP Tone Spacing=1MHz, P  
per tone=-5dBm, T =25°C, Z =Z =50  
L S L  
D
D
3
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS111011  
1 of 6  
123456

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SGC2363Z 替代型号

型号 品牌 替代类型 描述 数据表
UPC2749TB NEC

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