ZOWIE
Low VF Rectifier Diode
(200V~1000V / 1.0A)
SGC10DLH THRU SGC10MLH
Low VF Rectifier Diode
OUTLINE DIMENSIONS
FEATURES
Case : 1206-S
Unit : mm
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Halogen-free type
Lead free product, compliance to RoHS
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low power loss, high efficiency
3.40 ± 0.1
0.05
For surface mounted applications
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.70 ± 0.2
0.70 ± 0.2
APPLICATION
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General purpose rectification
Surge absorption
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.012 gram
MARKING
Cathode mark
Amps class
10
Halogen-free type
DL .
PACKING
Voltage class
Low VF
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3,000 pieces per 7" (178mm ± 2mm) reel
4 reels per box
Voltage class: D = 200V, G = 400V, J = 600V
K = 800V, M = 1000V
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Rating
Symbol
Unit
V
SGC10DLH
SGC10GLH
SGC10JLH
600
SGC10KLH
800
SGC10MLH
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
200
400
1000
1.0
A
Peak forward surge current (8.3ms single half sine-wave)
Operating junction temperature Range
Storage temperature Range
IFSM
Tj
40
-65 to +175
-65 to +175
oC
TSTG
Electrical characteristics (Ta = 25 oC)
ITEM
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 1.0A
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-
0.92
0.95
V
Repetitive peak reverse current
Junction capacitance
IRRM
VR = Max. VRRM , Ta = 25 oC
0.08
5
uA
pF
Cj
VR = 4V, f = 1.0 MHz
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-
-
12
130
40
-
-
-
Rth(JA)
Rth(JL)
Junction to ambient (NOTES 1)
Junction to lead (NOTES 1)
oC/W
Thermal resistance
NOTES : (1) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
(2) Preliminary draft.
REV. 2
2009/08