生命周期: | Active | 包装说明: | E-LELF-R2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.69 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | E-LELF-R2 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.06 A |
封装主体材料: | GLASS | 封装形状: | ELLIPTICAL |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大反向恢复时间: | 0.06 µs | 表面贴装: | YES |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGB10UFTX | SSDI |
获取价格 |
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2 | |
SGB10UFTXV | SSDI |
获取价格 |
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2 | |
SGB15N120 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGB15N120_07 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGB15N120AT | INFINEON |
获取价格 |
暂无描述 | |
SGB15N60 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGB15N60_06 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGB15N60ATMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PL | |
SGB15N60HS | INFINEON |
获取价格 |
High Speed IGBT in NPT-technology | |
SGB15N60HS_06 | INFINEON |
获取价格 |
High Speed IGBT in NPT-technology |