Datasheet > SGB02N120_07

SGB02N120_07

更新时间： 2024-11-09 06:11:27

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
11页	434K
描述
Fast IGBT in NPT-technology Lower Eoff compared to previous generation

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SGB02N120_07 数据手册

SGB02N120

Fast IGBT in NPT-technology

• Lower E_offcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-263-3-2

• Qualified according to JEDEC¹for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

E_off

T_j

Marking

Package

SGB02N120

1200V

0.11mJ

GB02N120

PG-TO-263-3-2

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

6.2

2.8

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

9.6

V_CE≤ 1200V, T_j≤ 150°C

Gate-emitter voltage

V_{G E}

E_AS

±20

Avalanche energy, single pulse

I_C= 2A, V_CC= 50V, R_GE= 25Ω, start at T_j= 25°C

Short circuit withstand time²

t_SC

µs

V_GE= 15V, 100V ≤ V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

P_{t ot}

T_C= 25°C

Operating junction and storage temperature

Soldering temperature (reflow soldering, MSL1)

T_j, T_stg

T_s

-55...+150

245

°C

¹J-STD-020 and JESD-022

²Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2_3 Jan 07

Power Semiconductors

12 3 4 5 6 7...11

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