是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | End Of Life | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.63 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 6.2 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE |
最大降落时间(tf): | 61 ns | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 42 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 24 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 375 ns | 标称接通时间 (ton): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGB02N120_07 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation | |
SGB02N120ATMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, | |
SGB02N120XT | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN, | |
SGB02N60 | INFINEON |
获取价格 |
FAST IGBT IN NPT TECHNOLOGY | |
SGB02N60_06 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | |
SGB02N60ATMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLA | |
SGB04N60 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGB04N60_06 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | |
SGB06N60 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology | |
SGB06N60_06 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |