Datasheet > SGB

SGB

更新时间： 2024-09-18 06:11:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
2页	117K
描述
SURFACE MOUNT RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SGB 数据手册

GALAXY ELECTRICAL

S3AB - - - S3MB

111REVERSE VOLTAGE: 50 --- 1000 V

CURRENT: 3.0 A

SURFACE MOUNT RECTIFIER

FEATURES

DO - 214AA(SMB)

Plastic package has underwriters laboratory

111 flammabilityclassification 94V-0

For surface mounted applications

Low profile package

Built-in strain relief,ideal for automated placement

Glass passivated chip junction

High temperature soldering:

111 250^oC/10 seconds at terminals

MECHANICAL DATA

Case:JEDEC DO-214AA,molded plastic over

1111passivated chip

Terminals:Solder plated, solderable per MIL-STD-

1111750, Method 2026

inch(mm)

Polarity: Color band denotes cathode end

Weight: 0.003 ounces, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified

S3AB S3BB

S3DB S3GB S3JB S3KB S3MB

UNITS

SBB

SAB

SDB SGB

SJB SKB

SMB

Device marking code

Maximumrecurrent peak reverse voltage

Max imum RMS v oltage

V_RRM

V_RWS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Max imum DC Bloc king Voltage

100

1000

Maximumaverage forword rectified current

3.0

I_F(AV)

I_FSM

V_F

I_R

V @ T =90^OC

Peak forward surge current @ T = 110°C8.3ms

V single half-sine-wave superimposed on rated

V load(JEDECMethod)

100

1.15

MaximumInstantaneous forward voltage at 3.0 A

Max imum DC r ev er se c ur r ent

@T_A=25^oC

at rated DCblockjing voltage @T_A=100^oC

Typical junction capacitance

100

C_J

^oC/W

Typical thermal resitance (NOTE 2)

R ^JA

^oC

Operating junction and storage temperature range T_JT_STG

-55--------+150

NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

www.galaxycn.com

2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm²) copper pad areas

Document Number 0280011

BLGALAXY ELECTRICAL

中文翻译

下载PDF

与SGB相关器件

型号	品牌	获取价格	描述	数据表
SGB02N120	INFINEON	获取价格	Fast S-IGBT in NPT-technology
SGB02N120_07	INFINEON	获取价格	Fast IGBT in NPT-technology Lower Eoff compared to previous generation
SGB02N120ATMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN,
SGB02N120XT	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, GREEN,
SGB02N60	INFINEON	获取价格	FAST IGBT IN NPT TECHNOLOGY
SGB02N60_06	INFINEON	获取价格	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
SGB02N60ATMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLA
SGB04N60	INFINEON	获取价格	Fast IGBT in NPT-technology
SGB04N60_06	INFINEON	获取价格	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
SGB06N60	INFINEON	获取价格	Fast IGBT in NPT-technology