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SGA6586ZPCK1 PDF预览

SGA6586ZPCK1

更新时间: 2024-11-27 01:08:35
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
6页 284K
描述
DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SGA6586ZPCK1 数据手册

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SGA6586ZDC  
to 4000MHz,  
Cascadable  
SiGe HBT  
MMIC Ampli-  
fier  
SGA6586Z  
DC to 4000MHz, CASCADABLE SiGe HBT  
MMIC AMPLIFIER  
Package: SOT-86  
Product Description  
Features  
The SGA6586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-  
ton configuration featuring one-micron emitters provides high FT and  
High Gain: 18.4dB at  
1950MHz  
excellent thermal performance. The heterojunction increases breakdown  
voltage and minimizes leakage current between junctions. Cancellation of  
emitter junction non-linearities results in higher suppression of intermodu-  
lation products. Only two DC-blocking capacitors, a bias resistor, and an  
optional RF choke are required for operation.  
Cascadable 50Ω  
Operates from Single Supply  
Low Thermal Resistance  
Package  
Applications  
Optimum Technology  
Matching® Applied  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
Gain & Return Loss vs. Freq. @TL=+25°C  
32  
24  
16  
8
0
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GAIN  
IRL  
-10  
-20  
-30  
-40  
Wireless Data, Satellite  
ORL  
GaAs pHEMT  
Si CMOS  
0
Si BJT  
0
1
2
3
4
5
Frequency (GHz)  
GaN HEMT  
RF MEMS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
23.8  
18.4  
16.7  
21.5  
19.0  
33.8  
32.2  
2500  
Max.  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
850MHz  
1950MHz  
>10dB  
Output Power at 1dB Compression  
Output Third Intercept Point  
Bandwidth Determined by Return  
Loss  
Input Return Loss  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
(Junction - Lead)  
21.4  
18.0  
3.1  
4.9  
80  
dB  
dB  
dB  
1950MHz  
1950MHz  
1950MHz  
4.5  
72  
5.3  
88  
V
mA  
°C/W  
97  
Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P  
per tone=-5dBm, R  
=39Ω, T =25°C, Z =Z =50Ω  
S
D
3
OUT  
BIAS  
L
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS100916  
1 of 6  

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