Datasheet > SGA5586ZSQ

SGA5586ZSQ

更新时间： 2024-02-22 19:27:54

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波
页数	文件大小	规格书
6页	284K
描述
DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

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SGA5586ZSQ 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	5A991.G	HTS代码：	8542.33.00.01
风险等级：	5.66	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	17.3 dB
最大输入功率 (CW)：	16 dBm	最大工作频率：	4000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

SGA5586ZSQ 数据手册

SGA5586ZDC

to 4000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA5586Z

DC to 4000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

Features

The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

ton configuration featuring one-micron emitters provides high F_Tand



High Gain: 18.7dB at

1950MHz

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.



Cascadable 50Ω

Operates from Single Supply

Low Thermal Resistance

Package

Applications

Optimum Technology

Matching® Applied

Gain & Return Loss vs. Frequency

V_D= 3.3 V, I_D= 60 mA (Typ.)



PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

GaAs HBT

GAIN

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

-10

-20

-30

-40

Wireless Data, Satellite

ORL

IRL

SiGe HBT



GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

Typ.

23.1

18.7

17.3

18.1

15.8

31.6

28.8

4000

Max.

Small Signal Gain

dBm

MHz

850MHz

1950MHz

2400 MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

Thermal Resistance

(Junction - Lead)

12.2

20.7

2.6

3.9

1950MHz

3.5

4.2

°C/W

Test Conditions: V =8V, I =60mA Typ., OIP Tone Spacing=1MHz, P

per tone=0dBm, R

=68Ω, T =25°C, Z =Z =50Ω

OUT

BIAS

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100916

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