Datasheet > SGA5489ZPCK1

SGA5489ZPCK1

更新时间： 2024-11-27 01:06:59

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
6页	465K
描述
DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SGA5489ZPCK1 数据手册

SGA5489ZDC

to 4000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA5489Z

DC to 4000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-89

Product Description

Features

The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

figuration featuring one-micron emitters provides high F_Tand excellent thermal per-



High Gain: 17.9dB at

1950MHz

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.



Cascadable 50Ω

Operates from Single Supply

Low Thermal Resistance

Package

Applications

Optimum Technology

Matching® Applied

Gain & Return Loss vs. Frequency



PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

GaAs HBT

V_D= 3.3 V, I_D= 60 mA (Typ.)

GaAs MESFET

GAIN

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

-10

-20

-30

-40

Wireless Data, Satellite

ORL

IRL



Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

17.7

Typ.

19.7

17.9

17.1

16.0

14.6

30.8

27.4

4000

Max.

21.7

Small Signal Gain

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

15.4

14.0

2.4

3.3

1950MHz

3.1

4.1

Thermal Resistance

(Junction - Lead)

°C/W

Test Conditions: V =8V, I =60mA Typ., OIP Tone Spacing=1MHz, P

per tone=0dBm, R

=75Ω, T =25°C, Z =Z =50Ω

OUT

BIAS

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100915

1 of 6

12 3 4 5 6

中文翻译

下载PDF

与SGA5489ZPCK1相关器件

型号	品牌	获取价格	描述	数据表
SGA5489ZSQ	RFMD	获取价格	DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA5489ZSR	RFMD	获取价格	DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA556	ETC	获取价格	Optoelectronic
SGA-5586	SIRENZA	获取价格	DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA-5586	STANFORD	获取价格	DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA5586Z	RFMD	获取价格	DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-5586Z	STANFORD	获取价格	DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA-5586Z	SIRENZA	获取价格	DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier
SGA5586ZPCK1	RFMD	获取价格	DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA5586ZSQ	RFMD	获取价格	DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

与SGA5489ZPCK1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

43
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

SGA5489ZPCK1

SGA5489ZPCK1 数据手册

与SGA5489ZPCK1相关器件

与SGA5489ZPCK1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SGA5489ZPCK1

SGA5489ZPCK1 数据手册

与SGA5489ZPCK1相关器件

与SGA5489ZPCK1相关文章

您还可以找

您在本页遇到什么问题？