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SGA5263ZSQ PDF预览

SGA5263ZSQ

更新时间: 2024-11-29 01:06:59
品牌 Logo 应用领域
威讯 - RFMD 射频微波
页数 文件大小 规格书
6页 330K
描述
DC to 4500MHz, Silicon Germanium Cascadable Gain Block

SGA5263ZSQ 数据手册

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SGA5263ZDC  
to 4500MHz,  
Silicon Germa-  
nium Cascad-  
able Gain  
SGA5263Z  
Block  
DC to 4500MHz, Silicon Germanium  
Cascadable Gain Block  
Package: SOT-363  
Product Description  
Features  
The SGA5263Z is a high performance SiGe HBT MMIC Amplifier. A Darling-  
ton configuration featuring one-micron emitters provides high FT and  
excellent thermal performance. The heterojunction increases breakdown  
voltage and minimizes leakage current between junctions. Cancellation of  
emitter junction non-linearities results in higher suppression of intermodu-  
lation products. Only two DC-blocking capacitors, a bias resistor, and an  
optional RF choke are required for operation.  
DC to 4500MHz Operation  
Single Voltage Supply  
Low Current Draw: 60mA at  
3.4V Typ.  
High Output Intercept:  
29dBm Typ. at 1950MHz  
Applications  
Optimum Technology  
Matching® Applied  
Small Signal Gain vs. Frequency  
Oscillator Amplifiers  
Broadband Gain Block  
IF/RF Buffer Amplifiers  
15  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
10  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
5
0
25C  
-40C  
85C  
Si BJT  
0.1  
1
1.9  
2.8  
3.7  
4.6  
5.5  
GaN HEMT  
RF MEMS  
Frequency GHz  
Specification  
Parameter  
Unit  
Condition  
Min.  
12.0  
Typ.  
13.3  
12.6  
12.3  
16.3  
15.0  
14.0  
32.5  
Max.  
14.6  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
850MHz, P  
Output Power at 1dB Compression  
Third Order Intercept Point  
per tone = -10dBm  
OUT  
29.3  
27.3  
dBm  
dBm  
MHz  
1950MHz, P  
2400MHz, P  
per tone = -10dBm  
per tone = -10dBm  
OUT  
OUT  
S
, S  
4500  
Minimum 10dB Return Loss (typ.)  
11 22  
Input VSWR  
Output VSWR  
Reverse Isolation  
1.2:1  
1.4:1  
18.3  
19.2  
19.5  
4.0  
1950MHz  
1950MHz  
850MHz  
1950MHz  
2400MHz  
1950MHz  
dB  
dB  
dB  
Noise Figure  
dB  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
(Junction - Lead)  
3.4  
60  
255  
V
54  
66  
mA  
°C/W  
Test Conditions: Z = 50, I = 60mA, T = 25°C  
0
D
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS121011  
1 of 6  

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