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SGA3563ZPCK1 PDF预览

SGA3563ZPCK1

更新时间: 2022-02-26 11:40:37
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
7页 511K
描述
DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SGA3563ZPCK1 数据手册

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SGA3563ZDC  
to 5000MHz,  
Cascadable  
SiGe HBT  
MMIC Ampli-  
fier  
SGA3563Z  
DC to 5000MHz, CASCADABLE SiGe HBT  
MMIC AMPLIFIER  
Package: SOT-363  
Product Description  
Features  
The SGA3563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-  
figuration featuring one-micron emitters provides high FT and excellent thermal per-  
High Gain: 25.5dB at  
850MHz  
formance. The heterojunction increases breakdown voltage and minimizes leakage  
current between junctions. Cancellation of emitter junction non-linearities results in  
higher suppression of intermodulation products. Only two DC-blocking capacitors, a  
bias resistor, and an optional RF choke are required for operation.  
Cascadable 50Gain Block  
High Output IP : 24.5dBm  
3
typ. at 1950MHz  
Low Noise Figure: 2.7dB typ.  
at 1950MHz  
Low Current Draw: 35mA typ.  
Optimum Technology  
Matching® Applied  
Gain & Return Loss vs. Frequency  
VD = 3.25V, ID = 35mA (Typ.)  
Single Voltage Supply Opera-  
tion  
32  
24  
16  
8
0
GaAs HBT  
GAIN  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
-10  
-20  
-30  
-40  
Applications  
IRL  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
ORL  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Wireless Data, Satellite  
Si BJT  
0
0
1
2
3
4
5
GaN HEMT  
RF MEMS  
Frequency (GHz)  
Specification  
Parameter  
Unit  
Condition  
Min.  
23.5  
19.5  
Typ.  
25.5  
21.5  
20.0  
13.0  
12.5  
24.0  
24.5  
5000  
Max.  
27.5  
23.5  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
850MHz  
1950MHz  
>10dB  
Output Power at 1dB Compression  
Output Third Intercept Point  
11.0  
22.5  
Bandwidth Determined by Return  
Loss  
Input Return Loss  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
(Junction - Lead)  
11.2  
11.2  
15.5  
20.0  
2.7  
3.25  
35  
dB  
dB  
dB  
1950MHz  
1950MHz  
1950MHz  
3.7  
3.5  
39  
3.0  
31  
V
mA  
°C/W  
255  
Test Conditions: I =35mA Typ., T =25°C, Z =Z =50P  
per tone=-5dBm, OIP Tone Spacing = 1MHz  
3
D
L
S
L
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS111011  
1 of 7  

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