5秒后页面跳转
SGA3363ZSQ PDF预览

SGA3363ZSQ

更新时间: 2022-02-26 11:40:37
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
6页 357K
描述
DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SGA3363ZSQ 数据手册

 浏览型号SGA3363ZSQ的Datasheet PDF文件第2页浏览型号SGA3363ZSQ的Datasheet PDF文件第3页浏览型号SGA3363ZSQ的Datasheet PDF文件第4页浏览型号SGA3363ZSQ的Datasheet PDF文件第5页浏览型号SGA3363ZSQ的Datasheet PDF文件第6页 
SGA3363Z  
SGA3363Z  
DC to 5500MHz, CASCADABLE SiGe HBT  
MMIC AMPLIFIER  
Package: SOT-363  
Product Description  
Features  
The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-  
ton configuration featuring one-micron emitters provides high FT and  
High Gain: 15.9dB at  
1950MHz  
excellent thermal performance. The heterojunction increases breakdown  
voltage and minimizes leakage current between junctions. Cancellation of  
emitter junction non-linearities results in higher suppression of intermodu-  
lation products. Only two DC-blocking capacitors, a bias resistor, and an  
optional RF choke are required for operation.  
Cascadable 50  
Operates from Single Supply  
Low Thermal Resistance  
Package  
Applications  
Optimum Technology  
Gain & Return Loss vs. Frequency  
Matching® Applied  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
VD= 2.6 V, ID= 35 mA (Typ.)  
20  
15  
10  
5
0
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GAIN  
-10  
-20  
-30  
-40  
IRL  
Wireless Data, Satellite  
ORL  
GaAs pHEMT  
Si CMOS  
0
0
1
2
3
4
5
6
Frequency (GHz)  
Si BJT  
TL=+25ºC  
GaN HEMT  
RF MEMS  
Specification  
Parameter  
Unit  
Condition  
Min.  
15.5  
Typ.  
17.5  
Max.  
19.5  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
850MHz  
1950MHz  
>10dB  
15.9  
15.3  
11.6  
10.5  
25.4  
23.1  
5500  
Output Power at 1dB Compression  
Output Third Intercept Point  
Bandwidth Determined by Return  
Loss  
Input Return Loss  
Output Return Loss  
Noise Figure  
20.4  
25.5  
3.5  
dB  
dB  
dB  
1950MHz  
1950MHz  
1950MHz  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
(Junction - Lead)  
2.3  
31  
2.6  
35  
255  
2.9  
39  
V
mA  
°C/W  
Test Conditions: V =5V, I =35mA Typ., OIP Tone Spacing=1MHz, P  
per tone=-5dBm, R  
=68, T =25°C, Z =Z =50  
S
D
3
OUT  
BIAS  
L
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS111011  
1 of 6  

与SGA3363ZSQ相关器件

型号 品牌 描述 获取价格 数据表
SGA3363ZSR RFMD DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

获取价格

SGA-3386 SIRENZA DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier

获取价格

SGA3386Z RFMD DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

获取价格

SGA-3386Z SIRENZA DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier

获取价格

SGA3386ZPCK1 RFMD DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

获取价格

SGA3386ZSQ RFMD DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

获取价格