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SGA-5263 PDF预览

SGA-5263

更新时间: 2024-11-24 22:43:15
品牌 Logo 应用领域
STANFORD 射频微波
页数 文件大小 规格书
5页 259K
描述
DC-4500 mhz silicon GERMANIUM CASCADEABLE GAIN BLOCK

SGA-5263 数据手册

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Preliminary  
Product Description  
SGA-5263  
Stanford Microdevices’ SGA-5263 is a high performance  
cascadeable 50-ohm amplifier designed for operation at  
voltages as low as 3.4V. This RFIC uses the latest Silicon  
Germanium Heterostructure Bipolar Transistor (SiGe HBT)  
process featuring 1 micron emitters with FT up to 50 GHz.  
DC-4500 MHz, Silicon Germanium  
Cascadeable Gain Block  
This circuit uses a Darlington pair topology with resistive  
feedback for broadband performance as well as stability over  
its entire temperature range. Internally matched to 50 Ohm  
impedance, the SGA-5263 requires only DC blocking and  
bypass capacitors for external components.  
Product Features  
• DC-4500 MHz Operation  
Small Signal Gain vs. Frequency  
15  
• Single Voltage Supply  
• Low Current Draw: 60mA at 3.4V typ.  
• High Output Intercept: 29 dBm typ. at 1950MHz  
10  
5
Applications  
25C  
-40C  
85C  
• Oscillator Amplifiers  
• Broadband Gain Blocks  
• IF/RF Buffer Amplifiers  
0
0.1  
1
1.9  
2.8  
3.7  
4.6  
5.5  
Frequency GHz  
Parameters: Test Conditions:  
Symbol  
Units  
Min.  
Typ.  
Max.  
Z0 = 50 Ohms, ID = 60 mA, T = 25ºC  
f = 850 MHz  
f = 1950 MHz  
f = 2400 MHz  
dBm  
dBm  
dBm  
16.3  
15.0  
14.0  
Output Power at 1dB Compression  
P1dB  
f = 850 MHz  
f = 1950 MHz  
f = 2400 MHz  
dBm  
dBm  
dBm  
32.5  
29.3  
27.3  
Third Order Intercept Point  
Power out per tone = -10 dBm  
IP3  
f = 850 MHz  
f = 1950 MHz  
f = 2400 MHz  
dB  
dB  
dB  
13.3  
12.6  
12.3  
Small Signal Gain  
S21  
Bandwidth  
S11  
S
11, S22: Minimum 10db Return Loss (typ.)  
MHz  
4500  
1.2:1  
1.4:1  
Input VSWR  
f = 1950 MHz  
f = 1950 MHz  
-
-
Output VSWR  
S22  
f = 850 MHz  
f = 1950 MHz  
f = 2400 MHz  
dB  
dB  
dB  
18.3  
19.2  
19.5  
Reverse Isolation  
S12  
NF  
VD  
Noise Figure  
f = 1950 MHz  
dB  
V
4.0  
3.4  
Device Voltage  
Thermal Resistance (junction - lead)  
ºC/W  
255  
Rth, j-l  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
1
EDS-101540 Rev A  

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