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SGA-2463

更新时间： 2024-02-07 13:35:32
品牌 Logo 应用领域
SIRENZA 放大器射频微波
页数 文件大小 规格书
5页 251K
描述
DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier

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SGA-2463 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：SOT-363, 6 PINReach Compliance Code：unknown
风险等级：5.14Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：17.1 dB最大输入功率 (CW)：18 dBm
JESD-609代码：e0安装特点：SURFACE MOUNT
功能数量：1端子数量：6
最大工作频率：5000 MHz最小工作频率：
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：TSSOP6,.08
电源：2.7 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：23 mA
表面贴装：YES技术：BIPOLAR
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

SGA-2463 数据手册

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SGA-2463  
Product Description  
RoHS Compliant  
& Green Package  
Pb  
The SGA-2463 is a high performance SiGe HBT MMIC Amplifier. A  
Darlington configuration featuring 1 micron emitters provides high  
SGA-2463Z  
DC-5000 MHz, Cascadable  
SiGe HBT MMIC Amplifier  
F
and excellent thermal perfomance. The heterojunction in-  
T
creases breakdown voltage and minimizes leakage current be-  
tween junctions. Cancellation of emitter junction non-linearities  
results in higher suppression of intermodulation products. Only 2  
DC-blocking capacitors, a bias resistor and an optional RF choke  
are required for operation.  
The matte tin finish on Sirenza’s lead-free package utilizes a post  
annealing process to mitigate tin whisker formation and is RoHS  
compliant per EU Directive 2002/95. This package is also manu-  
factured with green molding compounds that contain no antimony  
trioxide nor halogenated fire retardants.  
Product Features  
• Now available in Lead Free, RoHS  
Compliant, & Green Packaging  
• High Gain : 17.1 dB at 1950 MHz  
• Cascadable 50 Ohm  
Gain & Return Loss vs. Freq. @TL=+25°C  
24  
18  
12  
6
0
• Operates From Single Supply  
• Low Thermal Resistance Package  
GAIN  
-10  
-20  
-30  
-40  
IRL  
Applications  
ORL  
• PA Driver Amplifier  
• Cellular, PCS, GSM, UMTS  
• IF Amplifier  
0
0
1
2
3
4
5
• Wireless Data, Satellite  
Frequency (GHz)  
Symbol  
Parameter  
Units  
Frequency  
Min.  
Typ.  
Max.  
850 MHz  
1950 MHz  
18.0  
20.0  
17.1  
22.0  
G
Small Signal Gain  
dB  
850 MHz  
1950 MHz  
8.0  
7.2  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
850 MHz  
1950 MHz  
20.1  
18.0  
OIP3  
Bandwidth  
IRL  
Determined by Return Loss (>10dB)  
Input Return Loss  
MHz  
dB  
dB  
dB  
V
5000  
11.1  
23.1  
3.0  
1950 MHz  
1950 MHz  
1950 MHz  
ORL  
Output Return Loss  
Noise Figure  
NF  
Device Voltage  
2.4  
17  
2.7  
3.0  
23  
VD  
ID  
Device Operating Current  
mA  
20  
Thermal Resistance (junction to lead)  
°C/W  
255  
RTH, j-l  
VS = 5 V  
RBIAS = 120 Ohms TL = 25ºC  
ID = 20 mA Typ.  
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm  
ZS = ZL = 50 Ohms  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-100630 Rev E  
12345

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