Datasheet > SG7110WN (新产品)

SG7110WN (新产品)

更新时间： 2024-10-30 11:08:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	1764K
描述
Application: General Inverter for Automotive and Industrial Use, Heater for Automotive For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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SG7110WN (新产品) 数据手册

SG7110WN

650V 75A Insulated Gate Bipolar Transistor

Datasheet

lOutline

Wafer (W05)

Unsawn on foil (U03)

V_CES

I_{C (Nominal)}

650V

75A

V_{CE(sat) (Typ.)}

1.7V

Notch side

Max. Possible Chips per Wafer

812pcs

lFeatures

lInner Circuit

1) Trench Light Punch Through Type

2) Low Collector - Emitter Saturation Voltage

3) Short Circuit Withstand Time 8μs

(2)

(1) Gate

(2) Collector

(3) Emitter

(1)

(3)

lApplication

General Inverter

for Automotive and Industrial Use

Heater for Automotive

lAbsolute Maximum Ratings

Parameter

Symbol

Value

650

Unit

Collector - Emitter Voltage, T_j= 25°C

Gate - Emitter Voltage

V_CES

V_GES

±30

*1)

Collector Current

I_C

Pulsed Collector Current

225

I_CP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

www.rohm.com

2023.02 - Rev.A

1/3

12 3 4 5

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