是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | CERAMIC, DIP-8 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 驱动器位数: | 2 |
接口集成电路类型: | AND GATE BASED PERIPHERAL DRIVER | JESD-30 代码: | R-CDIP-T8 |
JESD-609代码: | e0 | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.3 A |
标称输出峰值电流: | 0.4 A | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5 V | 认证状态: | Not Qualified |
筛选级别: | 38535Q/M;38534H;883B | 子类别: | Peripheral Drivers |
最大供电电压: | 5.5 V | 最小供电电压: | 4.5 V |
标称供电电压: | 5 V | 表面贴装: | NO |
技术: | BIPOLAR | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
断开时间: | 110 µs | 接通时间: | 80 µs |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SG55462F | MICROSEMI |
获取价格 |
NAND Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55462F/883B | MICROSEMI |
获取价格 |
NAND Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55462L | MICROSEMI |
获取价格 |
NAND Gate Based Peripheral Driver, 0.4A, BIPolar, CQCC20 | |
SG55462L/883B | MICROSEMI |
获取价格 |
NAND Gate Based Peripheral Driver, 0.4A, BIPolar, CQCC20 | |
SG55463L/883B | MICROSEMI |
获取价格 |
OR Gate Based Peripheral Driver, 0.4A, BIPolar, CQCC20 | |
SG55464 | MICROSEMI |
获取价格 |
DUAL PERIPHERAL POSITIVE NOR DRIVER | |
SG55464F | MICROSEMI |
获取价格 |
NOR Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55464L | MICROSEMI |
获取价格 |
DUAL PERIPHERAL POSITIVE NOR DRIVER | |
SG55464L883B | MICROSEMI |
获取价格 |
DUAL PERIPHERAL POSITIVE NOR DRIVER | |
SG55464LDESC | MICROSEMI |
获取价格 |
DUAL PERIPHERAL POSITIVE NOR DRIVER |