是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP8,.35 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.06 | Is Samacsys: | N |
驱动器位数: | 2 | 接口集成电路类型: | AND GATE BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-GDIP-T8 | JESD-609代码: | e0 |
长度: | 10.415 mm | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 最大输出电流: | 0.3 A |
标称输出峰值电流: | 0.4 A | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.35 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5 V | 认证状态: | Not Qualified |
筛选级别: | 38535Q/M;38534H;883B | 座面最大高度: | 5.08 mm |
子类别: | Peripheral Drivers | 最大供电电压: | 5.5 V |
最小供电电压: | 4.5 V | 标称供电电压: | 5 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 断开时间: | 25 µs |
接通时间: | 25 µs | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SG55452BF/883B | MICROSEMI |
获取价格 |
NAND Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55452BY/883B | MICROSEMI |
获取价格 |
Peripheral Driver, 2 Driver, BIPolar, CDIP8, | |
SG55453BF | MICROSEMI |
获取价格 |
OR Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55453BF/883B | MICROSEMI |
获取价格 |
OR Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55453BL | MICROSEMI |
获取价格 |
OR Gate Based Peripheral Driver, 0.4A, BIPolar, CQCC20 | |
SG55453BY | MICROSEMI |
获取价格 |
OR Gate Based Peripheral Driver, CDIP8, CERAMIC, DIP-8 | |
SG55453BY/883B | MICROSEMI |
获取价格 |
OR Gate Based Peripheral Driver, CDIP8, CERAMIC, DIP-8 | |
SG55454B | MICROSEMI |
获取价格 |
DUAL PERIPHERAL POSITIVE NOR DRIVER | |
SG55454BF | MICROSEMI |
获取价格 |
NOR Gate Based Peripheral Driver, 0.4A, BIPolar | |
SG55454BL | MICROSEMI |
获取价格 |
DUAL PERIPHERAL POSITIVE NOR DRIVER |