Datasheet > SG50N06DS

SG50N06DS

更新时间： 2024-11-23 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	158K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG50N06DS 数据手册

SG50N06S, SG50N06DS

Discrete IGBTs

Dim.

Millimeter

Inches

Min.

Dimensions SOT-227(ISOTOP)

Min.

Max.

31.50

7.80

31.88

8.20

1.240

0.307

1.255

0.323

4.09

4.29

0.161

0.169

4.09

14.91

4.29

15.11

0.161

0.587

0.169

0.595

G=Gate, C=Collector,

E=Emitter

30.12

37.80

30.30

38.20

1.186

1.489

1.193

1.505

11.68

8.92

12.22

9.60

0.460

0.351

0.481

0.378

0.76

12.60

0.84

12.85

0.030

0.496

0.033

0.506

25.15

1.98

25.42

2.13

0.990

0.078

1.001

0.084

4.95

26.54

5.97

26.90

0.195

1.045

0.235

1.059

3.94

4.72

4.42

4.85

0.155

0.186

0.174

0.191

24.59

-0.05

25.07

0.1

0.968

-0.002

0.987

0.004

3.30

0.780

4.57

0.830

0.130

19.81

0.180

21.08

SG50N06DS

SG50N06S

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

600

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

200

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=10

Clamped inductive load, L=30uH

ICM=100

@ 0.8 VCES

SSOA

(RBSOA)

TC=25^oC

250

-55...+150

150

-55...+150

TJM

Tstg

^oC

Mounting torque

Terminal connection torque(M4)

1.5/13

Nm/Ib.in.

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

^oC

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=250uA; VCE=VGE

CE=0.8VCES

GE=0V;

CE=0V; VGE=±20V

=IC90; VGE=15V

600

2.5

GE(th)

200

CES

;

T C

=125^o

GES

±100

2.5

CE(sat)

中文翻译

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