Datasheet > SG50N06D3S

SG50N06D3S

更新时间： 2024-11-23 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	156K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG50N06D3S 数据手册

SG50N06D2S, SG50N06D3S

Discrete IGBTs

Dim.

Millimeter

Inches

Min.

Dimensions SOT-227(ISOTOP)

Min.

Max.

31.50

7.80

31.88

8.20

1.240

0.307

1.255

0.323

4.09

4.29

0.161

0.169

4.09

14.91

4.29

15.11

0.161

0.587

0.169

0.595

30.12

37.80

30.30

38.20

1.186

1.489

1.193

1.505

11.68

8.92

12.22

9.60

0.460

0.351

0.481

0.378

0.76

12.60

0.84

12.85

0.030

0.496

0.033

0.506

25.15

1.98

25.42

2.13

0.990

0.078

1.001

0.084

4.95

26.54

5.97

26.90

0.195

1.045

0.235

1.059

3.94

4.72

4.42

4.85

0.155

0.186

0.174

0.191

24.59

-0.05

25.07

0.1

0.968

-0.002

0.987

0.004

3.30

0.780

4.57

0.830

0.130

19.81

0.180

21.08

SG50N06D3S

SG50N06D2S

Symbol

Test Conditions

; RGE=1M

Maximum Ratings

Unit

CES

CGR

=25^o

to 150^o

600

±20

±30

GES

GEM

Continuous

Transient

C25

C90

=25^o

=90^o

=25^o

200

; 1 ms

GE=15V; TVJ=125^o

; R =10

ICM=100

SSOA

(RBSOA)

0.8VCES

250

Clamped inductive load; L=30uH

=25^o

^oC

600

150

RRM

FAVM

FRM

=70^o

; rectangular; d=50%

10ms; pulse width limited by T

=25^o

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

-40…+150

150

-40…+150

1.5/13

stg

Mounting torque

Terminal connection torque(M4)

Nm/Ib.in.

1.5/13

Weight

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

BV^CES

Test Conditions

Unit

=250uA; VGE=0V

=250uA; VCE=VGE

600

2.5

GE(th)

5.0

200

CES

CE=0.8VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15V

±100

2.5

CE(sat)

中文翻译

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