Datasheet > SG200N06S

SG200N06S

更新时间： 2022-04-06 15:57:32

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	159K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG200N06S 数据手册

SG200N06S

Discrete IGBTs

Dim.

Millimeter

Inches

Min.

Dimensions SOT-227(ISOTOP)

Min.

Max.

31.50

7.80

31.88

8.20

1.240

0.307

1.255

0.323

4.09

4.29

0.161

0.169

4.09

14.91

4.29

15.11

0.161

0.587

0.169

0.595

30.12

37.80

30.30

38.20

1.186

1.489

1.193

1.505

11.68

8.92

12.22

9.60

0.460

0.351

0.481

0.378

0.76

12.60

0.84

12.85

0.030

0.496

0.033

0.506

25.15

1.98

25.42

2.13

0.990

0.078

1.001

0.084

4.95

26.54

5.97

26.90

0.195

1.045

0.235

1.059

3.94

4.72

4.42

4.85

0.155

0.186

0.174

0.191

G=Gate, C=Collector, E=Emitter

24.59

-0.05

25.07

0.1

0.968

-0.002

0.987

0.004

3.30

0.780

4.57

0.830

0.130

19.81

0.180

21.08

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

600

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

200

100

300

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=22

Clamped inductive load, L=30uH

ICM=100

@ 0.8 VCES

SSOA

(RBSOA)

TC=25^oC

600

-55...+150

150

-55...+150

TJM

Tstg

^oC

2500

3000

VISOL

50/60Hz

t =1 min

t =1 s

IISOL

1 mA

Mounting torque

Terminal connection torque(M4)

1.5/13

Nm/Ib.in.

Weight

Characteristic Values

min. typ. max.

600

2.5

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=10mA; VCE=VGE

GE(th)

200

CES

CE=0.8VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15V

±400

2.5

CE(sat)

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