Crystal oscillator
Epson Toyocom
Product Number (please contact us)
SG-645
SG-636
: Q33645xx1xxxx00
: Q33636xx1xxxx00
CRYSTAL OSCILLATOR
SPXO
SG-645
•Frequency range
•Supply voltage
•Function
/
SG-636 series
:
:
:
2.21675 MHz to 135 MHz
2.5 V / 3.3 V / 5.0 V
Output enable(OE) or Standby( ST
)
•External dimensions : 7.1 × 5.1 × 1.5 mm (t: Max.)···SG-645
10.5 × 5.8 × 2.7 mm (t: Max.)···SG-636
Actual size
SG-645 series
SG-636 series
Specifications (characteristics)
Specifications
Item
Symbol
Remarks
SG-636 PCE
SG-636 SCE
2.21675 MHz
to 40.000 MHz
3.3 V ±0.3 V
SG-636 PTF
SG-636 PDE
2.21675 MHz
to 41.000 MHz
5.0 V ±0.5 V
2.21675 MHz
to 40.000 MHz
2.5 V ±0.25 V
Output frequency range
f
0
Supply voltage
Storage
Temperature temperature
VCC
-55 °C to +100 °C
Store as bare product after unpacking
T_stg
range
Operating
temperature
-20 °C to +70 °C
T_use
Frequency tolerance
Current consumption
Disable current
C: ±100 × 10-6
9 mA Max.
5 mA Max.
2 μA Max.
-20 °C to +70 °C
No load condition
OE=GND
f_tol
ICC
I_dis
I_std
17 mA Max.
10 mA Max.
5 mA Max.
3 mA Max.
Stand-by current
=GND(SCE)
ST
40 % to 60 %
45 % to 55 %
45 % to 55 %
CMOS load:50 % VCC level
TTL load: 1.4 V level
Symmetry
SYM
IOH=-8 mA(PTF)/-4 mA(SCE,PCE),
/-3.2 mA(PDE)
IOL=16 mA(PTF)/ 4 mA(SCE,PCE)
/3.2 mA(PDE)
High output voltage
Low output voltage
VOH
VCC-0.4 V Min.
0.4 V Max.
VOL
Output load condition
(TTL)
Output load condition
(CMOS)
L_TTL
L_CMOS
10 TTL Max.
50 pF Max.
L_CMOS ≤ 15 pF
30 pF Max.
15 pF Max.
Output enable /
disable input voltage
VIH
VIL
2.0 V Min.
0.8 V Max.
7 ns Max.
5 ns Max.
4 ms Max.
80 % VCC Min.
20 % VCC Max.
5 ns Max.
OE Terminal or
Terminal (SCE)
ST
CMOS load:20 % VCC to 80 % VCC level
TTL load:0.4 V to 2.4 V level
Time at minimum supply voltage to be 0 s
+25 °C, VCC=5.0 V/3.3 V/2.5 V, First year
Rise time / Fall time
t
r / t
f
4 ms Max.
Start-up time
Frequency aging
t_str
f_aging
±5 × 10-6 / year Max.
Specifications (characteristics)
Specifications
SG-636 PHG
Item
Symbol
Remarks
SG-636 PCG
SG-636 SCG
SG-636 PTG
Output frequency range
Supply voltage
2.21675 MHz to 33.000 MHz *1
4.5 V to 5.5 V
f
0
VCC
2.7 V to 3.6 V
Storage
Temperature temperature
-55 °C to +100 °C
Store as bare product after unpacking
T_stg
range
Operating
temperature
-20 °C to +70 °C
B: ±50 × 10-6 C: ±100 × 10-6
T_use
Frequency tolerance
Current consumption
Disable curren
f_tol
ICC
I_dis
I_std
-20 °C to +70 °C
No load condition
OE=GND (PTG,PHG,PCG)
25 mA Max.
20 mA Max.
12 mA Max.
10 mA Max.
50 μA Max.
Stand-by current
=GND (SCG)
ST
45 % to 55 %
50 % VCC level, L_CMOS=25 pF
1.4 V level, L_CMOS=25 pF
IOH=-8 mA
IOH=-16 mA
IOL=8 mA
Symmetry
SYM
VOH
VOL
40 % to 60 %
2.4 V Min.
VCC-0.4 V Min.
0.4 V Max.
High output voltage
Low output voltage
VCC-0.4 V Min.
0.4 V Max.
IOL=16 mA
Output load condition
Output enable /
disable input voltage
L_CMOS
VIH
25 pF Max.
2.0 V Min.
0.8 V Max.
70 % VCC Min.
20 % VCC Max.
4 ns Max.
OE Terminal or
Terminal
ST
VIL
3.4 ns Max.
12 ms Max.
±5 × 10-6 / year Max.
20 % VCC to 80 % VCC level, L_CMOS ≤ 25 pF
TTL load:0.4 V to 2.4 V level, L_CMOS ≤ 25 pF
t=0 at 90 % VCC
Rise time / Fall time
t
r / tf
2.4 ns Max.
Start-up time
Frequency aging
t_str
f_aging
+25 °C, VCC=5.0 V/ 3.3 V, First year
*1 4.1250 MHz < fo < 4.4336 MHz, 8.2500 MHz < fo < 8.8672 MHz, 16.500 MHz < fo < 17.7344 MHz : Unavailable
http://www.epsontoyocom.co.jp