Datasheet > SFS9624

SFS9624

更新时间： 2024-11-10 22:21:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	261K
描述
Advanced Power MOSFET

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SFS9624 数据手册

SFS9624

Advanced Power MOSFET

FEATURES

BV_DSS= -250 V

R_DS(on)= 2.4 W

I_D= -2.4 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 mA (Max.) @ V_DS= -250V

Low R_DS(ON): 1.65 W (Typ.)

TO-220F

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=100^oC)

Drain Current-Pulsed

Value

-250

-2.4

Units

V_DSS

I_D

-1.8

I_DM

V_GS

E_AS

I_AR

-9.6

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

144

-2.4

2.8

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25^oC)

Linear Derating Factor

V/ns

-4.8

P_D

T_J, T_STG

T_L

0.22

W/^oC

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

^oC

Purposes, 1/8 ” from case for 5-seconds

Thermal Resistance

Symbol

R_qJC

Characteristic

Typ.

Max.

Units

4.46

62.5

Junction-to-Case

^oC/W

R_qJA

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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