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SFH640 PDF预览

SFH640

更新时间: 2024-10-01 22:33:11
品牌 Logo 应用领域
英飞凌 - INFINEON 光电
页数 文件大小 规格书
3页 94K
描述
PHOTOTRANSISTOR 5.3 KV TRIOS HIGH BV CER VOLTAGE OPTOCOUPLER

SFH640 数据手册

 浏览型号SFH640的Datasheet PDF文件第2页浏览型号SFH640的Datasheet PDF文件第3页 
SFH 640  
PHOTOTRANSISTOR  
5.3 KV TRIOS HIGH BVCER VOLTAGE  
OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• CTR at I =10 mA, V =10 V  
F
CE  
Pin One ID  
SFH640-1, 40-80%  
SFH640-2, 63-125%  
2
1
3
Anode  
1
2
3
6
5
4
Base  
SFH640-3*, 100-200%  
• Good CTR Linearity with Forward Current  
• Low CTR Degradation  
.248 (6.30)  
.256 (6.50)  
Cathode  
NC  
Collector  
Emitter  
4
5
6
• Very High Collector-Emitter Breakdown Volt-  
age, BV  
=300 V  
CER  
.335 (8.50)  
.343 (8.70)  
• Isolation Test Voltage: 5300 VAC  
• Low Coupling Capacitance  
• High Common Mode Transient Immunity  
RMS  
.300 (7.62)  
typ.  
.039  
(1.00)  
Min.  
• Phototransistor Optocoupler  
.130 (3.30)  
.150 (3.81)  
6 Pin DIP Package with Base Connection  
• Field Effect Stable:TRIOS  
+
4°  
typ.  
18° typ.  
.110 (2.79)  
.150 (3.81)  
VE  
VDE 0884 Available with Option 1  
D
.020 (.051) min.  
.010 (.25)  
.014 (.35)  
• Underwriters Lab File #E52744  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
DESCRIPTION  
.300 (7.62)  
.347 (8.82)  
.100 (2.54) typ.  
The SFH 640 is an optocoupler with very high  
BVCER, a minimum of 300 volts. It is intended for  
telecommunications applications or any DC appli-  
cation requiring a high blocking voltage. The  
SFH640 is a “better than” replacement for H11D1.  
Maximum Ratings (T =25°C)  
A
Emitter  
Reverse Voltage ...................................................................................6 V  
DC Forward Current ....................................................................... 60 mA  
Surge Forward Current (tp10 µs) .................................................. 2.5 A  
Total Power Dissipation ............................................................... 100 mW  
*Supplies from this group can't always be guranteed due  
to unforseeable yield spread.  
+
TRIOSTRansparent IOn Shield  
Detector  
Collector-Emitter Voltage ................................................................ 300 V  
Collector-Base Voltage .....................................................................300 V  
Emitter-Base Voltage ..........................................................................7 V  
Collector Current ........................................................................... 50 mA  
Surge Collector Current (tp1 ms) ............................................... 100 mA  
Total Power Dissipation ............................................................... 300 mW  
Package  
Isolation Test Voltage (between emitter and  
detector, refer to climate DIN 40046 part 2  
Nov. 74) ...................................................... 5300 VAC  
Isolation Resistance  
/7500 VAC  
RMS  
PK  
12  
V =500 V, T =25°C .........................................................................≥10  
IO  
A
11  
V =500 V, T =100°C .......................................................................≥10  
IO  
A
Insulation Thickness between Emitter and Detector .................. 0.4 mm  
Creepage .................................................................................................7 mm  
Clearance .................................................................................................7 mm  
Comparative Tracking Index  
per DIN IEC 112/VDE 0303, part1 ...................................................175  
Storage Temperature Range .......................................... -55°C to +150°C  
Operating Temperature Range....................................... -55°C to +100°C  
Junction Temperature ......................................................................100°C  
Soldering Temperature (max. 10 sec., dip soldering:  
distance to seating plane1.5 mm) .............................................260°C  
5–1  

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