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SFH6315T

更新时间： 2024-11-14 22:33:11
品牌 Logo 应用领域
英飞凌 - INFINEON 光电
页数 文件大小 规格书
4页 52K
描述
HIGH SPEED OPTOCOUPLER

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中文翻译

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SFH6315T 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SOIC-8Reach Compliance Code：compliant
HTS代码：8541.40.80.00风险等级：5.27
其他特性：OPEN COLLECTOR, TTL COMPATIBLE配置：SINGLE
标称数据速率：1 MBps最大正向电流：0.025 A
最大绝缘电压：3000 VJESD-609代码：e0
元件数量：1最大通态电流：0.008 A
最高工作温度：70 °C最低工作温度：
光电设备类型：LOGIC IC OUTPUT OPTOCOUPLER端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

SFH6315T 数据手册

 浏览型号SFH6315T的Datasheet PDF文件第2页浏览型号SFH6315T的Datasheet PDF文件第3页浏览型号SFH6315T的Datasheet PDF文件第4页 
SFH6315T  
SFH6316T  
SFH6343T  
HIGH SPEED OPTOCOUPLER  
Package Dimensions in Inches (mm)  
FEATURES  
•
•
•
Surface Mountable  
SFH6315T/6T  
SFH6315/6  
Industry Standard SOIC-8 Footprint  
Compatible with Infrared Vapor Phase Reflow and  
Wave Soldering Processes  
Isolation Voltage, 2500 V  
RMS  
Very High Common Mode Transient Immunity:  
NC  
A
1
2
3
4
8
7
6
5
VCC  
Base VB  
C
E
.120±.002  
(3.05±.05)  
K
•
•
NC  
SFH6343T  
SFH6343  
NC  
A
1
2
3
4
8
7
6
5
VCC  
NC  
C
15000 V/µs at V =1500 V Guaranteed (SFH6343T)  
High Speed: 1 Mb/s  
TTL Compatible  
Guaranteed AC and DC Performance Over  
Temperature: 0°C to 70°C  
Open Collector Output  
Pin Compatible with HP Optocouplers  
SFH6315T—HCPL0500  
.154±.002  
(3.91±.05)  
CM  
C
L
.240  
(6.10)  
•
•
•
K
.016  
(.41)  
E
NC  
Pin 1  
7°  
40°  
.058±.005  
(1.49±.13)  
.015±.002  
(.38±.05)  
.192±.005  
(4.88±.13)  
•
•
.004 (.10)  
.008 (.20)  
.125±.005  
(3.18±.13)  
.008 (.20)  
5° max.  
SFH6316T—HCPL0501  
SFH6343T—HCPL0453  
Available in Tape and Reel (suffix T)  
.050 (1.27) typ.  
R.010  
(.25) max.  
Lead  
Coplanarity  
±.0015 (.04)  
max.  
.020±.004  
(.15±.10)  
2 plcs.  
•
.021 (.53)  
APPLICATIONS  
•
•
•
•
Line Receivers  
TOLERANCE: ±.005 (unless otherwise noted)  
Logic Ground Isolation  
Analog Signal Ground Isolation  
Replace Pulse Transformers  
Absolute Maximum Ratings (continued)  
Detector (Si Photodiode + Transistor)  
Supply Voltage............................................................–0.5 to 30 V  
Output Voltage ..........................................................–0.5 to ≥20 V  
Output Current ...................................................................... 8 mA  
DESCRIPTION  
The SFH6315T/16T/43T, high speed optocouplers, each  
consists of a GaAlAs infrared emitting diode, optically  
coupled with an integrated photodetector and a high  
speed transistor. The photodetector is junction isolated  
from the transistor to reduce miller capacitance effects.  
The open collector output function allows circuit design-  
ers to adjust the load conditions when interfacing with  
different logic systems such as TTL, CMOS, etc.  
Total Power Dissipation (T ≤70°C)................................... 100 mW  
A
Package  
Isolation Test Voltage  
between emitter and detector ............................. 2500 VAC  
RMS  
(refer to climate DIN 40046, part 2, Nov. 74)  
Pollution Degree (DIN VDE0110) .................................................2  
Creepage ............................................................................≥4 mm  
Clearance............................................................................≥4 mm  
Comparative Tracking Index  
Because the SFH6343T has a Faraday shield on the  
detector chip, it can also reject and minimize high input  
to output common mode transient voltages. There is no  
base connection, further reducing the potential electrical  
noise entering the package.  
per DIN IEC 112/VDE 0303, part 1.......................................175  
Isolation Resistance  
12  
V
V
=500 V, T =25°C, R (Note 2).............................≥10  
ISOL  
Ω
Ω
IO  
A
The SFH6315T/16T/43T are packaged in industry stan-  
dard SOIC-8 packages and are suitable for surface  
mounting.  
11  
=500 V, T =100°C, R  
(Note 2)............................≥10  
IO  
A
ISOL  
Storage Temperature Range.............................. –55°C to +150°C  
Ambient Temperature Range............................. –55°C to +100°C  
Junction Temperature ..........................................................100°C  
Soldering Temperature (t=10 sec. max.).............................260°C  
Dip soldering: distance to seating plane ≥1.5 mm  
Absolute Maximum Ratings  
Emitter (GaAlAs)  
Reverse Voltage...........................................................3 V  
DC Forward Current................................................25 mA  
Surge Forward Current ................................................1 A  
tp≤1 µs, 300 pulses/sec.  
Specifications subject to change.  
Total Power Dissipation (T ≤70°C)........................45 mW  
A
10.95  
Semiconductor Group  
4–44  
This document was created with FrameMaker 4.0.3  
1234

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