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SFH6315

更新时间: 2024-09-27 22:33:11
品牌 Logo 应用领域
英飞凌 - INFINEON 光电
页数 文件大小 规格书
4页 73K
描述
HIGH SPEED OPTOCOUPLER

SFH6315 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SOIC-8Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.48
其他特性:OPEN COLLECTOR, UL RECOGNIZED配置:SINGLE
标称数据速率:1 MBps最大正向电流:0.025 A
最大绝缘电压:2500 VJESD-609代码:e0
元件数量:1最大通态电流:0.008 A
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:LOGIC IC OUTPUT OPTOCOUPLER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SFH6315 数据手册

 浏览型号SFH6315的Datasheet PDF文件第2页浏览型号SFH6315的Datasheet PDF文件第3页浏览型号SFH6315的Datasheet PDF文件第4页 
SFH6315  
SFH6316  
SFH6343  
HIGH SPEED OPTOCOUPLER  
Package Dimensions in Inches (mm)  
FEATURES  
Surface Mountable  
SFH6315/6  
Industry Standard SOIC-8 Footprint  
Compatible with Infrared Vapor Phase Reflow and  
Wave Soldering Processes  
Isolation Voltage, 2500 V  
Very High Common Mode Transient Immunity:  
NC  
A
1
2
3
4
8 VCC  
7 Base VB  
6 C  
.120±.002  
(3.05±.05)  
K
RMS  
5 E  
NC  
SFH6343  
NC  
A
1
2
3
4
8 VCC  
7 NC  
6 C  
15000 V/µs at V =1500 V Guaranteed (SFH6343)  
High Speed: 1 Mb/s  
TTL Compatible  
Guaranteed AC and DC Performance Over  
Temperature: 0°C to 70°C  
Open Collector Output  
Pin Compatible with HP Optocouplers  
SFH6315—HCPL0500  
.154±.002  
(3.91±.05)  
CM  
C
.240  
(6.10)  
L
K
.016  
(.41)  
5 E  
NC  
Pin 1  
7°  
40°  
.058±.005  
(1.49±.13)  
.015±.002  
(.38±.05)  
.192±.005  
(4.88±.13)  
.004 (.10)  
.008 (.20)  
.125±.005  
(3.18±.13)  
.008 (.20)  
5° max.  
SFH6316—HCPL0501  
SFH6343—HCPL0453  
APPLICATIONS  
.050 (1.27) typ.  
R.010  
(.25) max.  
Lead  
Coplanarity  
±.0015 (.04)  
max.  
.020±.004  
(.15±.10)  
2 plcs.  
.021 (.53)  
Line Receivers  
Logic Ground Isolation  
Analog Signal Ground Isolation  
Replace Pulse Transformers  
TOLERANCE: ±.005 (unless otherwise noted)  
Absolute Maximum Ratings (continued)  
Detector(Si Photodiode + Transistor)  
DESCRIPTION  
The SFH6315/16/43, high speed optocouplers, each  
consists of a GaAlAs infrared emitting diode, optically  
coupled with an integrated photodetector and a high  
speed transistor. The photodetector is junction isolated  
from the transistor to reduce miller capacitance effects.  
The open collector output function allows circuit design-  
ers to adjust the load conditions when interfacing with  
different logic systems such as TTL, CMOS, etc.  
Supply Voltage ............................................................–0.5 to 30 V  
Output Voltage ..........................................................–0.5 to 20 V  
Output Current....................................................................... 8 mA  
Total Power Dissipation (T 70°C) ................................... 100 mW  
A
Package  
Isolation Test Voltage  
between emitter and detector ..............................2500 VAC  
(refer to climate DIN 40046, part 2, Nov. 74)  
RMS  
Because the SFH6343 has a Faraday shield on the  
detector chip, it can also reject and minimize high input  
to output common mode transient voltages. There is no  
base connection, further reducing the potential electrical  
noise entering the package.  
Pollution Degree (DIN VDE0110) .................................................2  
Creepage ............................................................................4 mm  
Clearance ............................................................................4 mm  
Comparative Tracking Index  
per DIN IEC 112/VDE 0303, part 1 .......................................175  
Isolation Resistance  
The SFH6315/16/43 are packaged in industry standard  
SOIC-8 packages and are suitable for surface mounting.  
12  
V =500 V, T =25°C, R (Note 2)..............................10  
IO  
A
ISOL  
11  
V =500 V, T =100°C, R (Note 2).............................10  
IO  
A
ISOL  
Absolute Maximum Ratings  
Emitter (GaAlAs)  
Reverse Voltage ........................................................... 3 V  
DC Forward Current................................................25 mA  
Surge Forward Current ................................................1 A  
tp1 µs, 300 pulses/sec.  
Storage Temperature Range .............................. –55°C to +150°C  
Ambient Temperature Range ............................. –55°C to +100°C  
Junction Temperature ...........................................................100°C  
Soldering Temperature (t=10 sec. max.)..............................260°C  
Dip soldering: distance to seating plane 1.5 mm  
Specications subject to change.  
Total Power Dissipation (T 70°C)......................... 45 mW  
A
1

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