SFH615AA/AGB/AGR/ABM/ABL/AY/AB
5.3 kV TRIOS“ Optocoupler
High Reliability
FEATURES
Dimensions in inches (mm)
• Variety of Current Transfer Ratios at 5.0 mA
– AA: 50–600%
2
1
pin one ID
– AGB: 100–600%
– AGR: 100–300%
– ABM: 200–400%
– ABL: 200–600%
.255 (6.48)
.268 (6.81)
Anode
Collector
Emitter
1
2
4
3
– AY: 50–150%
Cathode
– AB: 80–260%
3
4
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
• Isolation Test Voltage, 5300 V
.030 (.76)
.045 (1.14)
RMS
• High Collector-emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
=70 V
CEO
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
10°
4°
.110 (2.79)
.130 (3.30)
typ.
.020 (.508 )
.035 (.89)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.050 (1.27)
0.100 (2.54)
Maximum Ratings
Emitter
• Underwriters Lab File #52744
VE
D
•
VDE 0884 Available with Option 1
Reverse Voltage................................................................................6.0 V
DC Forward Current........................................................................60 mA
Surge Forward Current (t ≤10 µs) ....................................................2.5 A
DESCRIPTION
P
Total Power Dissipation................................................................100 mW
Detector
Collector-Emitter Voltage....................................................................70 V
Emitter-Collector Voltage...................................................................7.0 V
Collector Current.............................................................................50 mA
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
Collector Current (t ≤1.0 ms)........................................................100 mA
P
Total Power Dissipation................................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
part 2, Nov. 74......................................................................5300 V
RMS
Creepage................................................................................... ≥7.0 mm
Clearance................................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector.................. ≥0.4 mm
Comparative Tracking Index
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
or DC.
RMS
per DIN IEC 112/VDE0 303, part 1............................................... ≥175
Isolation Resistance
12
V =500 V, T =25°C ................................................................ ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C .............................................................. ≥10
IO
A
Storage Temperature Range..............................................–55 to +150°C
Ambient Temperature Range.............................................–55 to +100°C
Junction Temperature .....................................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm)...........................................260°C
Document Number: 83672
Revision 17-August-01
www.vishay.com
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