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SFH615AB-X001 PDF预览

SFH615AB-X001

更新时间: 2024-11-02 15:50:59
品牌 Logo 应用领域
威世 - VISHAY 输出元件光电
页数 文件大小 规格书
3页 417K
描述
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4

SFH615AB-X001 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, DIP-4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:5.5
Coll-Emtr Bkdn Voltage-Min:70 V配置:SINGLE
标称电流传输比:80%最大暗电源:100 nA
最大正向电流:0.06 A最大绝缘电压:5300 V
JESD-609代码:e3元件数量:1
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER端子面层:Matte Tin (Sn)
Base Number Matches:1

SFH615AB-X001 数据手册

 浏览型号SFH615AB-X001的Datasheet PDF文件第2页浏览型号SFH615AB-X001的Datasheet PDF文件第3页 
SFH615AA/AGB/AGR/ABM/ABL/AY/AB  
5.3 kV TRIOSOptocoupler  
High Reliability  
FEATURES  
Dimensions in inches (mm)  
• Variety of Current Transfer Ratios at 5.0 mA  
– AA: 50–600%  
2
1
pin one ID  
– AGB: 100–600%  
– AGR: 100–300%  
– ABM: 200–400%  
– ABL: 200–600%  
.255 (6.48)  
.268 (6.81)  
Anode  
Collector  
Emitter  
1
2
4
3
AY: 50–150%  
Cathode  
– AB: 80–260%  
3
4
• Low CTR Degradation  
• Good CTR Linearity Depending on Forward  
Current  
.179 (4.55)  
.190 (4.83)  
.300 (7.62) typ.  
.031 (.79) typ.  
.050 (1.27) typ.  
• Isolation Test Voltage, 5300 V  
.030 (.76)  
.045 (1.14)  
RMS  
• High Collector-emitter Voltage, V  
• Low Saturation Voltage  
• Fast Switching Times  
=70 V  
CEO  
.130 (3.30)  
.150 (3.81)  
.230 (5.84)  
.250 (6.35)  
• Field-Effect Stable by TRIOS (TRansparent IOn  
Shield)  
• Temperature Stable  
• Low Coupling Capacitance  
• End-Stackable, .100" (2.54 mm) Spacing  
• High Common-mode Interference Immunity  
(Unconnected Base)  
10°  
4°  
.110 (2.79)  
.130 (3.30)  
typ.  
.020 (.508 )  
.035 (.89)  
3°–9°  
.008 (.20)  
.012 (.30)  
.018 (.46)  
.022 (.56)  
.050 (1.27)  
0.100 (2.54)  
Maximum Ratings  
Emitter  
• Underwriters Lab File #52744  
VE  
D
VDE 0884 Available with Option 1  
Reverse Voltage................................................................................6.0 V  
DC Forward Current........................................................................60 mA  
Surge Forward Current (t 10 µs) ....................................................2.5 A  
DESCRIPTION  
P
Total Power Dissipation................................................................100 mW  
Detector  
Collector-Emitter Voltage....................................................................70 V  
Emitter-Collector Voltage...................................................................7.0 V  
Collector Current.............................................................................50 mA  
The SFH615XXX features a large assortment of cur-  
rent transfer ratio, low coupling capacitance and high  
isolation voltage. These couplers have a GaAs infra-  
red emitting diode emitter, which is optically coupled  
to a silicon planar phototransistor detector, and is  
incorporated in a plastic DIP-4 package.  
Collector Current (t 1.0 ms)........................................................100 mA  
P
Total Power Dissipation................................................................150 mW  
Package  
Isolation Test Voltage between Emitter and  
Detector, refer to Climate DIN 40046,  
The coupling devices are designed for signal trans-  
mission between two electrically separated circuits.  
The couplers are end-stackable with 2.54 mm lead  
spacing.  
part 2, Nov. 74......................................................................5300 V  
RMS  
Creepage................................................................................... 7.0 mm  
Clearance................................................................................... 7.0 mm  
Insulation Thickness between Emitter and Detector.................. 0.4 mm  
Comparative Tracking Index  
Creepage and clearance distances of >8 mm are  
achieved with option 6. This version complies with IEC  
950 (DIN VDE 0805) for reinforced insulation up to an  
operation voltage of 400 V  
or DC.  
RMS  
per DIN IEC 112/VDE0 303, part 1............................................... 175  
Isolation Resistance  
12  
V =500 V, T =25°C ................................................................ 10  
IO  
A
11  
V =500 V, T =100°C .............................................................. 10  
IO  
A
Storage Temperature Range..............................................–55 to +150°C  
Ambient Temperature Range.............................................–55 to +100°C  
Junction Temperature .....................................................................100°C  
Soldering Temperature (max. 10 s. Dip Soldering  
Distance to Seating Plane 1.5 mm)...........................................260°C  
Document Number: 83672  
Revision 17-August-01  
www.vishay.com  
2–239  

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