Datasheet > SFF9240

SFF9240

更新时间： 2024-09-25 22:22:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管脉冲局域网
页数	文件大小	规格书
7页	209K
描述
Advanced Power MOSFET

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中文翻译

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SFF9240 数据手册

SFF9240

Advanced Power MOSFET

FEATURES

BV_DSS= -200 V

R_DS(on)= 0.5 Ω

I_D= -7.6 A

! Avalanche Rugged Technology

! Rugged Gate Oxide Technology

! Lower Input Capacitance

! Improved Gate Charge

! Extended Safe Operating Area

! Lower Leakage Current : 10 µA (Max.) @ V_DS= -200V

! Lower R_DS(ON): 0.344 Ω (Typ.)

TO-3PF

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

-200

-7.6

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=100^oC)

Drain Current-Pulsed

I_D

-5.3

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

770

-7.6

6.0

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25^oC)

Linear Derating Factor

V/ns

-5.0

P_D

T_J, T_STG

T_L

0.48

W/^oC

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

^oC

Purposes, 1/8 ” from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_θJC

Junction-to-Case

2.08

^oC/W

R_θJA

Junction-to-Ambient

Rev. A

12 3 4 5 6 7

中文翻译

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