Datasheet > SFF5N60

SFF5N60

更新时间： 2024-09-25 06:11:15

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
7页	510K
描述
Silicon N-Channel MOSFET

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SFF5N60 数据手册

SFF5N60

Silicon N-Channel MOSFET

Features

�

4.5A, 600V, R_DS(on)(Max2.2Ω)@V_GS=10V

Ultra-low Gate Charge(Typical 16 nC)

Fast Switching Capability

100%Avalanche Tested

Maximum Junction Temperature Range(150℃)

General Description

This Power MOSFET is Produced using Winsemi's advanced

Planar stripe , VDMOS technology . This latest technology has

been especially designed to minimize on-state resistance,have

a high rugged avalanche characteristics.This devices is specially

well suited for half bridge and full bridge resonant topology line

a electronic lamp ballast , high efficiency switched mode power

supplies,active power factor correction

Absolute Maximum Ratings

Symbol

Parameter

Value

600

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

4.5*

3.0*

I_D

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

300

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation(@Tc=25℃)

Derating Factor above25℃

(Note2)

( Note1)

(Note3)

V/ns

E_AR

dv/dt

4.5

P_D

0.26

-55~150

300

W/℃

℃

T_J,T_stg

T_L

Junction and Storage Temperature

Channel Temperature

℃

*Drain current limited by junction temperature

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

3.79

62.5

R_QJC

R_QJA

Thermal Resistance,Junction-to-Case

Thermal Resistance,Junction-to-Ambient

℃/W

Rev.A Aug.2010

12 3 4 5 6 7

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