Datasheet > SFF250M_2

SFF250M_2

更新时间： 2024-11-15 09:28:31

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	117K
描述
N-Channel POWER MOSFET

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数据手册

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SFF250M_2 数据手册

SFF250M

SFF250Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

30 AMP / 200 Volts

0.060 Ω typical

SFF250 __ __ __

Screening ^2/__ = Not Screen

TX = TX Level

N-Channel POWER MOSFET

│

└

│

└

TXV = TXV Level

S = S Level

Features:

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

• Rugged Construction with Polysilicon Gate Cell

• Low R_DS(ON)and High Transconductance

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

Package ^3/M = TO-254

Z = TO-254Z

• Low Input and Transfer Capacitance for Easy Paralleling

• Ceramic Seals Available for Improved Hermeticity

• Hermetically Sealed Surface Mount Power Package

• TX, TXV, Space Level Screening Available

• Replacement for IRFM250 Types

Maximum Ratings

Symbol

Value

Units

Volts

Amps

ºC

Drain – Source Voltage

V_DS

V_GS

200

±20

Gate – Source Voltage

Continuous Collector Current

Operating & Storage Temperature

I_D

Top & Tstg

-55 to +150

Maximum Thermal Resistance

Junction to Case

ºC/W

R_θJC

P_D

T_C= 25ºC

T_C= 55ºC

125

Total Device Dissipation

TO-254 (M)

TO-254Z (Z)

For Pin Out Configuration and Optional Lead Bend, See Page 3.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00049E

DOC

12 3

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