SFF23N60S2S

更新时间： 2024-11-18 13:13:23

品牌	Logo	应用领域
SSDI		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
2页	128K
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数据手册

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SFF23N60S2S 数据手册

SFF23N60S1

SFF23N60S2

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

21 AMP, 600 Volts, 320 mΩ

Avalanche Rated N-channel

MOSFET

SMD1, 2

Features:

•

Rugged poly-Si gate

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Hot Case power SMD

Low Total Gate Charge

Fast Switching

Note

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

1/ maximum current limited by package configuration

Maximum Ratings

Symbol

Value

Units

600

Drain - Source Voltage

V_DSS

±30

±40

continuous

transient

Gate – Source Voltage

V_GS

@ T_C= 25ºC

@ T_C= 125ºC

I_D1

I_D2

Max. Continuous Drain Current (package limited)

Pulsed Drain (Instantaneous) Current (Tj limited)

Max. Avalanche current

I_D3

I_AR

@ T_C= 25ºC

@ L= 0.1 mH

@ T_C= 25ºC

1500 / 30

300

Single / Repetitive Avalanche Energy

Total Power Dissipation

E_AS/ E_AR

P_D

-55 to +150

0.42 (typ 0.3)

Operating & Storage Temperature

Maximum Thermal Resistance

ºC

T_OP& T_STG

R_0JC

Junction to Case

ºC/W

SMD 1

SMD 2

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0029B

DOC

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