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SF86_16 PDF预览

SF86_16

更新时间: 2024-10-28 01:25:03
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平伟 - PINGWEI /
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描述
8A Superfast Recovery Rectifier

SF86_16 数据手册

  
SF84(F,B) thru SF88(F,B)  
8A Superfast Recovery Rectifier  
FEATURE  
High current capability  
Low forward voltage drop  
Low power loss, high efficiency  
High surge capability  
High ESD capability  
TO-220AC  
ITO-220AC  
SF8XF  
High temperature soldering guaranteed:  
260°C/10s/0.25"(6.35mm) from case  
SF8X  
MECHANICAL DATA  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Mounting position: any  
TO-263  
SF8XB  
TYPICALAPPLICATIONS  
For use in low voltage, high frequency rectifier of switching mode  
power supplies, freewheeling diodes, DC/DC converters and  
polarity protection application.  
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MAXIMUM RATINGS  
SF84  
SF86  
SF88  
Parameter  
Symbol  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current at TC=90°C  
total device  
per diode  
IF(AV)  
IFSM  
A
A
8.0  
Peak Forward Surge Current 8.3ms Single Half sine-wave  
superimposed on rate load per diode (JEDEC method)  
Maximum Reverse Recovery Time (Note 1)  
Junction Capacitance (Note2)  
100  
35  
trr  
CJ  
ns  
pF  
°C  
°C  
80  
60  
Storage Temperature Range  
TSTG  
TJ  
-55 to +150  
-55 to +150  
Operation Temperature Range  
ELECTRONICAL CHARACTERISTICS  
SF84  
SF86  
SF88  
Parameter  
Symbol  
units  
Maximum Forward Voltage Drop per diode at 8A (Note 3)  
VF  
IR  
1.0  
1.3  
10.0  
400.0  
1.7  
V
@ TC =25°C  
@ TC=100°C  
Maximum DC Reverse Current at rated  
DC blocking voltage (Note 3)  
μA  
THERMAL CHARACTERISTICS  
ITO-220  
TO-220  
TO-263  
units  
Parameter  
Symbol  
Typical Thermal Resistance (Note 4)  
Rth (JC)  
3.2  
2.2  
2.2  
°C/W  
Note:  
1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.  
3. Pulse test: 300 μs pulse width, 1% duty cycle.  
4. Thermal Resistance from Junction to Case Mounted on heatsink.  
- 页码 -  
Rev. 14-1  
http:// www.perfectway.cn  

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Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, TO-220, TO-220A, 2 PIN