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SF66G PDF预览

SF66G

更新时间: 2024-03-03 10:08:43
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 218K
描述
R-6

SF66G 数据手册

 浏览型号SF66G的Datasheet PDF文件第2页浏览型号SF66G的Datasheet PDF文件第3页浏览型号SF66G的Datasheet PDF文件第4页 
RoHS  
SF61G THRU SF68G  
COMPLIANT  
Super Fast Recovery Rectifier  
Features  
● Ultrafast reverse recovery time  
● Low leakage current  
● Low switching losses, high efficiency  
● High forward surge capability  
● Glass passivated chip junction  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters  
for consumer, computer and telecommunication.  
Mechanical Data  
ackage: R-6  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Color band denotes the cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
■Maximum Ratings  
SF61G SF62G SF63G SF64G SF65G SF66G SF67G SF68G  
PARAMETER  
SYMBOL  
UNIT  
SF61G SF62G SF63G SF64G SF65G SF66G SF67G SF68G  
Device marking code  
V
V
V
V
A
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
RMS  
V
100  
Maximum DC blocking Voltage  
DC  
Average Forward Current  
IF(AV)  
6.0  
@60Hz sine wave, Resistance load, Ta =65  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
150  
IFSM  
A
300  
94  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t8.3≤ms Tj=25Rating of per diode  
Typical junction capacitance  
@Measured at 1MHz and Applied Reverse  
Voltage of 4.0 V.D.C  
A2s  
pF  
I2t  
Cj  
102  
58  
46  
T
-55 ~ +150  
-55 ~ +150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
SF61G SF62G SF63G SF64G SF65G SF66G SF67G SF68G  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
V
I
=6.0A  
V
0.95  
1.3  
1.7  
F
FM  
T =25℃  
2.5  
100  
35  
j
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
I
μA  
ns  
R
trr  
T =125℃  
j
Maximum reverse recovery  
time  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-A164  
Rev.2.2, 30-Jan-21  
www.21yangjie.com  

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