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SF5G41A PDF预览

SF5G41A

更新时间: 2024-10-01 22:18:11
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
6页 239K
描述
TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF5G41A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:End Of Life零件包装代码:TO-220AB
包装说明:LEAD FREE, 13-10G1B, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.16
Is Samacsys:N外壳连接:ANODE
配置:SINGLE关态电压最小值的临界上升速率:100 V/us
最大直流栅极触发电流:15 mA最大直流栅极触发电压:1 V
最大维持电流:40 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大均方根通态电流:7.8 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

SF5G41A 数据手册

 浏览型号SF5G41A的Datasheet PDF文件第2页浏览型号SF5G41A的Datasheet PDF文件第3页浏览型号SF5G41A的Datasheet PDF文件第4页浏览型号SF5G41A的Datasheet PDF文件第5页浏览型号SF5G41A的Datasheet PDF文件第6页 
SF5G41A,SF5J41A  
TOSHIBA THYRISTOR SILICON PLANAR TYPE  
SF5G41A,SF5J41A  
MEDIUM POWER CONTROL APPLICATIONS  
Unit: mm  
l Repetitive Peak OffState Voltage : V  
= 400, 600V  
= 400, 600V  
DRM  
RRM  
Repetitive Peak Reverse Voltage  
l Average OnState Current  
l Gate Trigger Current  
: V  
: I  
: I  
= 5A  
T (AV)  
GT  
= 15mA (MAX.)  
MAXIMUM RATINGS  
CHARACTERISTIC  
SYMBOL  
RATING  
400  
UNIT  
V
Repetitive Peak  
SF5G41A  
SF5J41A  
SF5G41A  
SF5J41A  
V
OffState Voltage and  
Repetitive Peak Reverse  
Voltage  
DRM  
RRM  
V
600  
500  
720  
NonRepetitive Peak  
Reverse Voltage  
V
V
RSM  
(NonRepetitive<5ms,  
JEDEC  
JEITA  
TOSHIBA  
Weight: 2g  
TO220AB  
T = 0~125°C)  
j
Average OnState Current  
I
5
A
A
T (AV)  
1310G1B  
(Half Sine Waveform Tc = 91°C)  
R.M.S OnState Current  
I
7.8  
T (RMS)  
80 (50Hz)  
88 (60Hz)  
32  
Peak One Cycle Surge OnState  
Current (NonRepetitive)  
I
A
TSM  
2
2
2
I t Limit Value  
I t  
A s  
Critical Rate of Rise of OnState  
di / dt  
100  
A / µs  
Current  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Forward Gate Voltage  
Peak Reverse Gate Voltage  
Peak Forward Gate Current  
Junction Temperature  
P
5
0.5  
W
W
V
GM  
P
G (AV)  
V
10  
FGM  
V
5  
V
RGM  
I
2
A
GM  
T
40~125  
40~125  
°C  
°C  
j
Storage Temperature Range  
T
stg  
1
2001-07-13  

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