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SF5403-TR

更新时间: 2024-11-06 13:13:23
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快速软恢复二极管
页数 文件大小 规格书
5页 120K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

SF5403-TR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:5.74
Is Samacsys:N应用:ULTRA FAST RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn96.5Ag3.5)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SF5403-TR 数据手册

 浏览型号SF5403-TR的Datasheet PDF文件第2页浏览型号SF5403-TR的Datasheet PDF文件第3页浏览型号SF5403-TR的Datasheet PDF文件第4页浏览型号SF5403-TR的Datasheet PDF文件第5页 
SF5400, SF5401, SF5402, SF5403, SF5404, SF5405, SF5406, SF5407, SF5408  
Vishay Semiconductors  
Ultra-Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated  
• Hermetically sealed axial leaded glass envelope  
• Low reverse current  
• High reverse voltage  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
949588  
• Halogen-free according to IEC 61249-2-21  
definition  
MECHANICAL DATA  
APPLICATIONS  
Case: SOD-64  
• Switched mode power supplies  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
• High-frequency inverter circuits  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
R = 50 V; IFAV = 3 A  
PACKAGE  
SF5400  
SF5401  
SF5402  
SF5403  
SF5404  
SF5405  
SF5406  
SF5407  
SF5408  
V
SOD-64  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
V
V
V
V
V
V
V
R = 100 V; IFAV = 3 A  
R = 200 V; IFAV = 3 A  
R = 300 V; IFAV = 3 A  
R = 400 V; IFAV = 3 A  
R = 500 V; IFAV = 3 A  
R = 600 V; IFAV = 3 A  
R = 800 V; IFAV = 3 A  
V
R = 1000 V; IFAV = 3 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
SYMBOL  
VALUE  
50  
UNIT  
V
SF5400  
SF5401  
SF5402  
SF5403  
SF5404  
SF5405  
SF5406  
SF5407  
SF5408  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
100  
200  
300  
400  
500  
600  
800  
1000  
150  
3
V
V
V
Reverse voltage = repetitive peak  
reverse voltage  
V
V
V
V
V
Peak forward surge current  
Average forward current  
A
IFAV  
A
Junction and storage temperature  
range  
Tj = Tstg  
ER  
- 55 to + 175  
10  
°C  
Non repetitive reverse avalanche  
energy  
I
(BR)R = 0.4 A  
mJ  
Document Number: 86061  
Rev. 1.8, 25-May-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
91  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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