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SF5402TAP

更新时间: 2024-11-25 21:13:27
品牌 Logo 应用领域
威世 - VISHAY 超快速软恢复二极管
页数 文件大小 规格书
5页 38K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,

SF5402TAP 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
应用:SUPER FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LALF-W2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

SF5402TAP 数据手册

 浏览型号SF5402TAP的Datasheet PDF文件第2页浏览型号SF5402TAP的Datasheet PDF文件第3页浏览型号SF5402TAP的Datasheet PDF文件第4页浏览型号SF5402TAP的Datasheet PDF文件第5页 
SF5400...SF5408  
Vishay Telefunken  
Super Fast Soft Recovery Rectifier  
Features  
Glass passivated  
Hermetically sealed axial leaded glass envelope  
Low reverse current  
High reverse voltage  
Applications  
94 9588  
Switched mode power supplies  
High–frequency inverter circuits  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
50  
Unit  
SF5400  
SF5401  
SF5402  
SF5403  
SF5404  
SF5405  
SF5406  
SF5407  
SF5408  
100  
200  
300  
400  
500  
600  
800  
1000  
150  
3
Reverse voltage=  
Repetitive peak reverse voltage  
V =  
R
V
V
RRM  
Peak forward surge current  
Average forward current  
t = 10 ms, half sinewave  
I
A
A
p
FSM  
I
FAV  
Junction and storage  
temperature range  
Non repetitive reverse avalanche  
energy  
T =T  
–55...+175  
10  
C
j
stg  
I
=0.4A  
E
R
mJ  
(BR)R  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
Value  
25  
70  
Unit  
K/W  
Lead length l = 10 mm, T = constant  
L
Junction ambient  
R
thJA  
on PC Board with spacing 25 mm  
www.vishay.com  
1 (5)  
Document Number 86061  
Rev. 5, 27-Sep-00  

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