SF504GP-TP

更新时间： 2024-11-28 13:13:23

品牌	Logo	应用领域
美微科 - MCC		整流二极管超快速恢复二极管
页数	文件大小	规格书
2页	86K
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中文翻译

获取价格

数据手册

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SF504GP-TP 数据手册

M C C

SF500 G P

thru

SF504 G P

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁ ꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Low forward voltage, high current capability

5 Amp Surper Fast

Recovery Rectifiers

50 - 400Volts

Hermetically sealed

High surge capability

Superfast recovery times-epitaxial construction

Maximum Ratings

DO-201AD

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 25.0°C/W Junction To Lead

Microsemi

Catalog

Number

Device

Marking

Maximum

Reccurrent

Peak

Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

SF500GP SF500GP

SF501GP SF501GP

SF502GP SF502GP

SF503GP SF503GP

SF504GP SF504GP

35V

70V

140V

210V

280V

50V

100V

200V

300V

400V

100V

200V

300V

400V

Cathode

Mark

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

I_F(AV)

5.0A

T_A= 55°C

I_FSM

150A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

V_F

I_R

.95V

1.25V

I_FM= 5.0A;

T_A= 25°C*

DIMENSIONS

SF500~SF502

SF503~SF504

INCHES

MIN

---

.048

1.000

MIN

DIM

MAX

.370

.250

.052

---

MAX

9.50

6.40

1.30

---

NOTE

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

---

5.0uA

T_A= 25°C

1.20

25.40

300uA

T_A= 125°C

Maximum Reverse

Recovery Time

Typical Junction

Capacitance

T_rr

C_J

35nS

45pF

Test Conditions

IF=.5A,IR=1A,Irr=.25A

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

中文翻译

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