WTE
POWER SEMICONDUCTORS
Pb
SF31 – SF37
3.0A SUPERFAST DIODE
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-201AD
Min
Dim
A
Max
—
!
!
!
!
!
25.4
B
7.20
9.50
1.30
5.30
C
1.20
D
4.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SF31
50
SF32
100
70
SF33
150
SF34
SF35
300
SF36
400
SF37
600
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
V
RMS Reverse Voltage
VR(RMS)
IO
35
105
140
3.0
210
280
420
V
A
Average Rectified Output Current
(Note 1)
@TA = 50°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
125
A
Forward Voltage
@IF = 3.0A
VFM
IRM
0.95
1.3
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
100
µA
Reverse Recovery Time (Note 2)
trr
Cj
35
nS
pF
°C
°C
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
100
80
Tj
-65 to +125
-65 to +150
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SF31 – SF37
1 of 4
© 2006 Won-Top Electronics