Datasheet > SF33G

SF33G

更新时间： 2024-11-23 12:04:27

品牌	Logo	应用领域
亞昕 - YEASHIN		快速恢复二极管
页数	文件大小	规格书
2页	53K
描述
SUPE RFAST RECOVERY RECTIFIERS VOLTAG E - 50 to 8 00 Volts CURRENT - 3.0 Amperes

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中文翻译

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SF33G 数据手册

DATA SHEET

SF31G~SF38G

SEMICONDUCTOR

SUPERFAST RECOVERY RECTIFIERS

VOLTAG E - 50 to 800 Volts CURRENT - 3.0 Amperes

FEATURES

DO-201AD Unit:inch(mm)

• Superfast recovery times-epitaxial construction

• Low forward voltage, high current capability

• Exceeds environmental standards of MIL-S-19500/228

• Hermetically sealed

.210 (5.3)

.188 (4.8)

1.0 (25.4)

MIN.

• Low leakage

DIA.

• High surge capability

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound

• High temperature soldering : 260^OC / 10 seconds at terminals

• Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MECHANICAL DATA

.375 (9.5)

.285 (7.2)

1.0 (25.4)

MIN.

.052 (1.3)

.048 (1.2)

DIA.

• Case: Molded plastic, DO-201AD

• Terminals: Axial leads, solderable to MIL-STD-202,

Method 208

• Polarity: Color Band denotes cathode end

• Mounting Position: Any

• Weight: 0.04 ounce, 1.12 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz.

SYMBOLS

VRRM

VRMS

SF31G

SF32G

100

SF33G

150

SF34G

200

SF35G

SF36G

400

SF37G

600

SF38G UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

300

210

300

800

640

800

105

140

320

420

VDC

Maximum DC Blocking Voltage

Maximum Average Forward

100

150

200

400

600

I(AV)

IFSM

Current .375"(9.5mm) lead length

3.0

°C

at TA=55

Peak Forward Surge Current, IFM (surge):

8.3ms single half sine-wave superimposed

on rated load(JEDEC method)

125.0

Maximum Forward Voltage at 3.0A DC

Maximum DC Reverse Current

0.95

1.25

1.7

5.0

at Rated DC Blocking Voltage

Maximum DC Reverse Current at

300

°C

Rated DC Blocking Voltage TA=125

TRR

Maximum Reverse Recovery Time(Note 1)

Typical Junction capacitance (Note 2)

Typical Junction Resistance(Note 3)

35.0

°C

RθJA

20.0

TJ,TSTG

°C

Operating and Storage Temperature Range TJ

-55 to +150

NOTES:

1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted

http://www.yeashin.com

REV.02 20110725

中文翻译

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与SF33G相关器件

型号	品牌	获取价格	描述	数据表
SF33H31	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H31-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H32	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H32-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H33	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H35	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H36-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H36-2	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H36-3	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
SF33H36-4	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,

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